AS4C8M16S-6TCN Alliance Memory, AS4C8M16S-6TCN Datasheet - Page 44

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AS4C8M16S-6TCN

Manufacturer Part Number
AS4C8M16S-6TCN
Description
DRAM 128M SDRAM 8M X 16 166MHz
Manufacturer
Alliance Memory
Datasheet

Specifications of AS4C8M16S-6TCN

Rohs
yes
Data Bus Width
16 bit
Organization
8 M x 16
Package / Case
TSOP II-54
Memory Size
128 Mbit
Maximum Clock Frequency
166 MHz
Access Time
5.4 ns
Supply Voltage - Max
4.6 V
Supply Voltage - Min
1 V
Maximum Operating Current
120 mA
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Figure 36.1. Full Page Read Cycle
FEBRUARY 2011
CKE
WE#
BA0,1
DQM
CLK
CS#
RAS#
CAS#
A10
A0-A9,
A11
DQ
Hi-Z
Activate
Cammand
Bank A
High
RAx
RAx
T0
T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
CAx
Activate
Cammand
Bank B
RBx
RBx
Ax Ax+1 Ax+2
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address
(Burst Length=Full Page, CAS# Latency=2)
Ax-2 Ax-1
Read
Command
Bank B
CBx
Ax
44
Ax+1 Bx
Bx+1 Bx+2 Bx+3 Bx+4 Bx+5 Bx+6
Burst Stop
Command
Precharge
Command
Bank B
Don’t Care
t
RP
AS4C8M16S
Activate
Command
Bank B
RBy
RBy

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