AS4C8M16S-6TCN Alliance Memory, AS4C8M16S-6TCN Datasheet - Page 46

• Manufacturer Part Number: AS4C8M16S-6TCN
• Description: DRAM 128M SDRAM 8M X 16 166MHz
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TCN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 M x 16
• Package / Case: TSOP II-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 166 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: 1 V
• Maximum Operating Current: 120 mA
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT

Figure 37. Full Page Write Cycle
A0-A9,
A11
CS#
CLK
CKE
RAS#
CAS#
WE#
A10
DQM
DQ
BA0,1
FEBRUARY 2011
Hi-Z
Activate
Cammand
Bank A
High
RAx
RAx
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command Cammand
Bank A
CAx
DAx
1
DAx+1 DAx+2 DAx+3 DAx-
Activate
Bank B
RBx
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RBx
(Burst Length=Full Page)
DAx
DAx+1
Write
Command
Bank B
Full Page burst operation does not
terminate when the burst length is
satisfied; the burst counter increments
and continues bursting beginning with
the starting address
CBx
DBx
DBx+5
46
DBx+1 DBx+2 DBx+3 DBx+4
Burst Stop
Command
Precharge
Command
Bank B
Data is ignored
Don’t Care
Command
Activate
Bank B
RBy
RBy
AS4C8M16S