MX7575TQ/883B Maxim Integrated, MX7575TQ/883B Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
MX7575TQ/883B
Manufacturer Part Number
MX7575TQ/883B
Description
Analog to Digital Converters - ADC 8-Bit Precision DAC
Manufacturer
Maxim Integrated
Datasheet
1.MX7576KCWNT.pdf
(12 pages)
Specifications of MX7575TQ/883B
Number Of Channels
1
Architecture
SAR
Conversion Rate
200 KSPs
Resolution
8 bit
Input Type
Single-Ended
Snr
45 dB
Interface Type
Parallel
Operating Supply Voltage
5 V
Maximum Operating Temperature
+ 125 C
Package / Case
CDIP N
Maximum Power Dissipation
842 mW
Minimum Operating Temperature
- 55 C
Number Of Converters
1
Voltage Reference
External
ABSOLUTE MAXIMUM RATINGS
V
V
AGND to DGND ...............................................-0.3V, V
Digital Input Voltage to DGND
Digital Output Voltage to DGND
CLK Input Voltage to DGND ............................-0.3V, V
REF to AGND ...................................................-0.3V, V
AIN to AGND....................................................-0.3V, V
ELECTRICAL CHARACTERISTICS
(V
T
CMOS, µP-Compatible, 5µs/10µs, 8-Bit ADCs
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
(CS, RD, TP, MODE) ......................................-0.3V, V
(BUSY, D0–D7) ..............................................-0.3V, V
A
ACCURACY
ANALOG INPUT
REFERENCE INPUT
LOGIC INPUTS
DD
DD
Resolution
Total Unadjusted Error
Relative Accuracy
No-Missing-Codes Resolution
Full-Scale Error
Full-Scale Tempco
Offset Error (Note 1)
Offset Tempco
Voltage Range
DC Input Impedance
Slew Rate, Tracking
Signal-to-Noise Ratio (Note 2)
Reference Voltage
Reference Current
Input Low Voltage
Input High Voltage
Input Current
Input Capacitance (Note 2)
DD
= T
_______________________________________________________________________________________
to AGND...............................................................-0.3V, +7V
to DGND ..............................................................-0.3V, +7V
= +5V; V
MIN
PARAMETER
to T
MAX
REF
CS
, unless otherwise noted.)
,
= 1.23V; AGND = DGND = 0V; f
RD
, MODE
SYMBOL
V
SNR
V
TUE
I
V
INL
C
REF
I
REF
INH
INL
IN
IN
MX757_K/B/T
MX757_J/A/S
MX757_K/B/T
MX757_J/A/S
1LSB = 2V
MX7575
MX7575, V
±5% variation for specified performance
V
IN
= 0V or V
DD
DD
DD
DD
DD
DD
+ 0.3V
+ 0.3V
+ 0.3V
+ 0.3V
+ 0.3V
+ 0.3V
CLK
REF
IN
DD
= 2.46V
/256
= 4MHz external for MX7575; f
CONDITIONS
p-p
Continuous Power Dissipation (T
Operating Temperature Ranges
Storage Temperature Range .............................-65°C to +160°C
Lead Temperature (soldering,10sec) ..............................+300°C
Plastic DIP (derate 11.11mW/°C above +70°C) ...............889mW
Wide SO (derate 9.52mW/°C above +70°C)..................762mW
CERDIP (derate 10.53mW/°C above +70°C) .................842mW
PLCC (derate 10.00mW/°C above +70°C) ....................800mW
MX757_J/K ............................................................0°C to +70°C
MX757_A/B ........................................................-25°C to +85°C
MX757_JE/KE ....................................................-40°C to +85°C
MX757_S/T.......................................................-55°C to +125°C
T
T
at 10kHz, Figure 13
A
A
= +25°C
= T
MIN
to T
MAX
CLK
MIN
2.4
10
45
8
8
0
= 2MHz external for MX7576;
A
= +70°C)
TYP
1.23
±5
±5
2V
0.386
MAX
±1/2
±1/2
±10
500
0.8
±1
±2
±1
±1
±1
10
REF
ppm/°C
ppm/°C
UNITS
LSB
LSB
LSB
LSB
V/µs
Bits
Bits
MΩ
dB
µA
µA
pF
V
V
V
V