CY7C1520JV18-300BZC Cypress Semiconductor Corp, CY7C1520JV18-300BZC Datasheet - Page 9
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CY7C1520JV18-300BZC
Manufacturer Part Number
CY7C1520JV18-300BZC
Description
IC SRAM 72MBIT 300MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1520JV18-300BZXC.pdf
(26 pages)
Specifications of CY7C1520JV18-300BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
72M (2M x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
SMD
Quantity:
1 988
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and V
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175: and 350:
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the DDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
Application Example
Figure 1
Document Number: 001-12559 Rev. *C
Echo Clock1/Echo Clock#1
Echo Clock2/Echo Clock#2
MASTER
ASIC)
(CPU
BUS
or
shows two DDR-II used in an application.
Source CLK#
Return CLK#
Cycle Start#
Return CLK
Source CLK
Addresses
SS
R/W#
DQ
to allow the SRAM to adjust its output
R = 50ohms
DQ
Vterm = 0.75V
Vterm = 0.75V
,
A
with V
LD#
DDQ
SRAM#1
R/W#
Figure 1. Application Example
= 1.5V. The
C C#
CQ/CQ#
K
K#
ZQ
R = 250ohms
DDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free-running clocks and are
synchronized to the output clock of the DDR-II. In single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in the
Switching Characteristics
DLL
These chips utilize a DLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the DLL is locked after
1024 cycles of stable clock. The DLL can also be reset by
slowing or stopping the input clock K and K for a minimum of 30
ns. However, it is not necessary to reset the DLL to lock to the
desired frequency. The DLL automatically locks 1024 clock
cycles after a stable clock is presented. The DLL may be
disabled by applying ground to the DOFF pin. When the DLL is
turned off, the device behaves in DDR-I mode (with one cycle
latency and a longer access time). For information refer to the
application note DLL Considerations in QDRII™/DDRII.
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
DQ
A
on page 22.
LD#
SRAM#2
R/W#
C C#
CQ/CQ#
K
K#
ZQ
R = 250ohms
Page 9 of 26
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