MT47H32M8BP-37E:B TR Micron Technology Inc, MT47H32M8BP-37E:B TR Datasheet - Page 49

IC DDR2 SDRAM 256MBIT 60FBGA

MT47H32M8BP-37E:B TR

Manufacturer Part Number
MT47H32M8BP-37E:B TR
Description
IC DDR2 SDRAM 256MBIT 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of MT47H32M8BP-37E:B TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
256M (32M x 8)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1049-2
AC Overshoot/Undershoot Specification
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 20: Overshoot
Figure 21: Undershoot
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 and Table 26.
V
V
DD
V
SS
SS
/V
/V
/V
DDQ
SSQ
DD
DDQ
SSQ
SS
SSQ
(see Figure 20)
(see Figure 21)
(see Figure 20)
(see Figure 21)
Maximum amplitude
Maximum amplitude
49
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.19 Vns
0.19 Vns
0.5 Vns
0.5 Vns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
Undershoot area
Overshoot area
-25/-25E
0.66 Vns
0.66 Vns
-25/-25E
0.23 Vns
0.23 Vns
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 Vns
0.80 Vns
0.23 Vns
0.23 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
©2003 Micron Technology, Inc. All rights reserved.
1.00 Vns
1.00 Vns
0.28 Vns
0.28 Vns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E

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