NGTB15N120LWG ON Semiconductor, NGTB15N120LWG Datasheet - Page 3

• Manufacturer Part Number: NGTB15N120LWG
• Description: IGBT Transistors 1200V/15A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB15N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 156 W
• Package / Case: TO-247
• Mounting Style: Through Hole

10,000
1000
100
70
60
50
40
30
20
10
70
60
50
40
30
20
10
10
0
0
0
0
0
V
V
GE
GE
25
V
V
V
1
1
= 17 to 11 V
= 17 to 11 V
CE
CE
CE
Figure 1. Output Characteristics
Figure 3. Output Characteristics
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Typical Capacitance
50
2
2
75
3
3
10 V
10 V
100
4
4
C
C
C
oes
res
ies
125
5
5
TYPICAL CHARACTERISTICS
T
150
6
J
6
= −40°C
7 V
9 V
8 V
9 V
8 V
T
J
= 25°C
175
http://onsemi.com
7
7
7 V
200
8
8
3
60
50
40
30
20
10
60
50
40
30
20
10
16
14
12
10
0
0
8
6
4
2
0
0
0
0
Figure 4. Typical Transfer Characteristics
Figure 6. Diode Forward Characteristics
V
1
0.25
CE
V
Figure 2. Output Characteristics
GE
V
, COLLECTOR−EMITTER VOLTAGE (V)
GE
= 17 to 11 V
2
V
, GATE−EMITTER VOLTAGE (V)
F
, FORWARD VOLTAGE (V)
0.50
5
3
T
J
= 150°C
0.75
T
4
J
= 150°C
10 V
5
1.00
T
10
J
= 25°C
T
6
J
= 25°C
T
8 V
9 V
7 V
1.25
J
= 150°C
7
1.50
15
8