NX3008CBKV,115 NXP Semiconductors, NX3008CBKV,115 Datasheet - Page 17

• Manufacturer Part Number: NX3008CBKV,115
• Description: MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008CBKV,115

• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V, - 30 V
• Resistance Drain-source Rds (on): 1 Ohms, 2.8 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Fall Time: 19 ns, 38 ns
• Forward Transconductance Gfs (max / Min): 310 mS, 160 mS
• Gate Charge Qg: 0.17 nC, 0.23 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 30 ns, 11 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 69 ns, 65 ns

NXP Semiconductors
10. Soldering
NX3008CBKV
Product data sheet
Fig 33. Reflow soldering footprint for SOT666 (SOT666)
2
1.7
1.075
0.538
0.55
(2×)
0.45
(4×)
(4×)
0.5
All information provided in this document is subject to legal disclaimers.
2.75
2.45
2.1
1.6
1.7
Rev. 1 — 29 July 2011
0.65
(2×)
(2×)
0.6
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
(6×)
0.4
0.325
0.25
(2×)
(4×)
0.375
(2×)
(4×)
0.3
Dimensions in mm
NX3008CBKV
solder lands
placement area
solder paste
occupied area
sot666_fr
© NXP B.V. 2011. All rights reserved.
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