SIHP14N50D-E3 Vishay/Siliconix, SIHP14N50D-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHP14N50D-E3
• Description: MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHP14N50D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 400 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Power Dissipation: 208 W

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-1229-Rev. A, 21-May-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
40
30
20
10
30
24
18
12
40
30
20
10
0
6
0
0
0
0
0
T
Fig. 3 - Typical Transfer Characteristics
TOP 15 V
BOTYTOM 5.0 V
TOP
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
J
= 150 °C
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
V
V
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5
DS
5
V
GS
5
DS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
T
T
10
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
10
J
= 25 °C
= 25 °C
10
T
15
J
15
= 150 °C
15
5.0 V
5.0 V
20
20
For technical questions, contact:
20
25
25
30
25
30
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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10 000
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
100
2.5
1.5
0.5
24
20
16
12
10
8
4
0
3
2
0
1
1
- 60 - 40 - 20 0
0
0
www.vishay.com/doc?91000
V
DS
T
100
10
I
C
J
Q
D
, Drain-to-Source Voltage (V)
, Junction Temperature (°C)
oss
C
g
= 7 A
, Total Gate Charge (nC)
rss
C
iss
20 40 60 80 100 120 140 160
200
20
V
C
C
C
GS
rss
oss
iss
= 0 V, f = 1 MHz
= C
= C
= C
300
V
gd
gs
V
V
V
30
ds
GS
DS
DS
DS
+ C
+ C
Vishay Siliconix
SiHP14N50D
Document Number: 91512
= 10 V
= 400 V
= 250 V
= 100 V
gd
gd
, C
400
40
ds
Shorted
500
50