FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 4
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FCD380N60E
Manufacturer Part Number
FCD380N60E
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FCD380N60E.pdf
(9 pages)
Specifications of FCD380N60E
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
10.2 A
Resistance Drain-source Rds (on)
380 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D-PAK
Fall Time
10 ns
Forward Transconductance Gfs (max / Min)
10 S
Gate Charge Qg
34 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
106 W
Rise Time
9 ns
Typical Turn-off Delay Time
64 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCD380N60E
Manufacturer:
INTEL
Quantity:
1 000
Part Number:
FCD380N60E
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Eoss vs. Drain to Source Voltage Switching Capability
1.16
1.12
1.08
1.04
1.00
0.96
0.92
0.88
0.01
100
0.1
6
5
4
3
2
1
0
10
-80
1
0
0.1
vs. Case Temperature
100
vs. Temperature
-40
Operation in This Area
is Limited by R
V
T
DS
J
V
, Junction Temperature [
, Drain to Source Voltage [V]
DS
1
*Notes:
, Drain-Source Voltage [V]
200
1. T
2. T
3. Single Pulse
0
C
J
= 150
= 25
DS(on)
300
40
o
10
o
C
C
10ms
400
80
*Notes:
1ms
1. V
2. I
DC
100
100
D
o
GS
C]
= 10mA
500
120
μ
= 0V
s
10
μ
600
160
s
1000
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
12
10
8
6
4
2
0
-80
25
vs. Temperature
-40
50
T
T
J
C
, Junction Temperature [
, Case Temperature [
0
75
40
100
80
o
*Notes:
C]
1. V
2. I
125
o
www.fairchildsemi.com
C]
D
120
GS
= 5A
= 10V
150
160