FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 5
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FCD380N60E
Manufacturer Part Number
FCD380N60E
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FCD380N60E.pdf
(9 pages)
Specifications of FCD380N60E
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
10.2 A
Resistance Drain-source Rds (on)
380 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D-PAK
Fall Time
10 ns
Forward Transconductance Gfs (max / Min)
10 S
Gate Charge Qg
34 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
106 W
Rise Time
9 ns
Typical Turn-off Delay Time
64 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCD380N60E
Manufacturer:
INTEL
Quantity:
1 000
Part Number:
FCD380N60E
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
0.05
0.1
2
1
10
-5
0.05
0.02
0.01
Single pulse
0.5
0.1
0.2
10
-4
Rectangular Pulse Duration [sec]
(Continued)
10
-3
5
10
-2
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
(t) = 1.18
- T
10
C
= P
-1
t
1
t
2
DM
o
C/W Max.
* Z
1
θ
/t
JC
2
(t)
10
0
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