FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 5

• Manufacturer Part Number: FCD380N60E
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCD380N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.2 A
• Resistance Drain-source Rds (on): 380 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D-PAK
• Fall Time: 10 ns
• Forward Transconductance Gfs (max / Min): 10 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 106 W
• Rise Time: 9 ns
• Typical Turn-off Delay Time: 64 ns

©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
0.05
0.1
2
1
10
-5
0.05
0.02
0.01
Single pulse
0.5
0.1
0.2
10
-4
Rectangular Pulse Duration [sec]
(Continued)
10
-3
5
10
-2
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
(t) = 1.18
- T
10
C
= P
-1
t
1
t
2
DM
o
C/W Max.
* Z
1
θ
/t
JC
2
(t)
10
0
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