FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 8

• Manufacturer Part Number: FCD380N60E
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCD380N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.2 A
• Resistance Drain-source Rds (on): 380 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D-PAK
• Fall Time: 10 ns
• Forward Transconductance Gfs (max / Min): 10 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 106 W
• Rise Time: 9 ns
• Typical Turn-off Delay Time: 64 ns

Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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FCD380N60E Rev. C1