BUK6C2R1-55C,118 NXP Semiconductors, BUK6C2R1-55C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK6C2R1-55C,118
• Description: MOSFET N-chan TrenchMOS FET
• Manufacturer: NXP Semiconductors

Specifications of BUK6C2R1-55C,118

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 228 A
• Resistance Drain-source Rds (on): 5.7 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 300 W
• Factory Pack Quantity: 800

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK6C2R1-55C
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(A)
(K/W)
I
th(j-mb)
D
10
10
10
10
10
10
10
10
-1
-2
-3
-1
1
4
3
2
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
Thermal characteristics
single shot
δ = 0.5
0.2
0.1
0.05
0.02
Parameter
thermal resistance from junction to mounting base
10
Limit R
-5
DSon
1
= V
DS
/ I
All information provided in this document is subject to legal disclaimers.
D
10
-4
Rev. 3 — 18 January 2012
10
10
-3
DC
N-channel TrenchMOS intermediate level FET
Conditions
see
10
Figure 4
-2
100 μ s
t
1 ms
10 ms
100 ms
p
10
=10 μ s
BUK6C2R1-55C
2
V
Min
-
DS
10
P
-1
(V)
t
p
Typ
-
T
© NXP B.V. 2012. All rights reserved.
t
p
(s)
δ =
003aaf965
003aaf930
Max
0.5
t
T
p
t
10
1
3
Unit
K/W
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