BUK7610-100B /T3 NXP Semiconductors, BUK7610-100B /T3 Datasheet

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BUK7610-100B /T3

Manufacturer Part Number
BUK7610-100B /T3
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7610-100B_T3.pdf (12 pages)

Specifications of BUK7610-100B /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Resistance Drain-source Rds (on)
0.01 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
36 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
45 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
120 ns
Part # Aliases
BUK7610-100B,118
Scan or click this QR code to view the latest information for this product
1. Product profile
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
non-repetitive drain-
source avalanche
energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
•
•
•
•
•
•
•
•
BUK7610-100B
N-channel TrenchMOS standard level FET
6 July 2012
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
Conditions
T
V
T
V
Fig.
V
T
I
V
D
j
mb
j
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C;
= 75 A; V
= 25 °C;
11;
= 10 V; T
= 10 V; I
= 10 V; I
= 10 V; T
Fig. 12
Fig. 13
sup
j
D
D
Fig. 2
≤ 175 °C
mb
j(init)
= 25 A; T
= 25 A; V
≤ 100 V; R
= 25 °C;
= 25 °C; unclamped
j
DS
= 25 °C;
Fig.
GS
= 80 V;
= 50 Ω;
1;
Fig. 3
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
8.6
22
-
Max
100
75
300
10
-
629
Unit
V
A
W
mΩ
nC
mJ

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BUK7610-100B /T3 Summary of contents

Page 1

... BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... ° 100 ° °C; pulsed; t ≤ 10 µ All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B Graphic symbol mbb076 Version SOT404 Min Max - 100 - 100 -20 20 Fig. 1; Fig. 3 ...

Page 3

... P der (%) 150 200 T (°C) mb Fig. 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B N-channel TrenchMOS standard level FET Min - -55 -55 - [ ° Ω 100 150 T © ...

Page 4

... Product data sheet Conditions Fig. 4 mounted on printed-circuit board ; minimum footprint - All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B N-channel TrenchMOS standard level FET 003aag933 t =10 µ 100 µ 100 (V) DS Min ...

Page 5

... °C j from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B Min Typ Max Unit 100 - - ...

Page 6

... (V) DS Fig. 6. 03aa35 typ max (V) GS Fig. 8. All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B N-channel TrenchMOS standard level FET Min Typ Fig 0. ° 212 11 DSon Drain-source on-state resistance as a function of gate-source voltage ...

Page 7

... Fig. 10. Gate-source threshold voltage as a function of 03ng77 150 200 I (A) D Fig. 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 120 junction temperature 2 ...

Page 8

... Fig. 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B N-channel TrenchMOS standard level FET C iss C oss C rss function of drain-source voltage; typical values 03ng71 ° ...

Page 9

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B N-channel TrenchMOS standard level FET mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...

Page 10

... NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B © NXP B.V. 2012. All rights reserved ...

Page 11

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BUK7610-100B Product data sheet N-channel TrenchMOS standard level FET All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B © NXP B.V. 2012. All rights reserved ...

Page 12

... For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 July 2012 BUK7610-100B Product data sheet N-channel TrenchMOS standard level FET All information provided in this document is subject to legal disclaimers. 6 July 2012 BUK7610-100B © NXP B.V. 2012. All rights reserved ...

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