BUK7610-100B /T3 NXP Semiconductors, BUK7610-100B /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7610-100B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7610-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 0.01 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 36 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 45 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 120 ns
• Part # Aliases: BUK7610-100B,118

NXP Semiconductors
BUK7610-100B
Product data sheet
Fig. 13. Gate-source voltage as a function of gate
Fig. 15. Reverse diode current as a function of reverse diode voltage; typical value
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
V
DD
= 14 V
40
(A)
I
S
100
80
60
40
20
0
60
V
0.0
DD
All information provided in this document is subject to legal disclaimers.
Q
G
= 80 V
(nC)
03ng72
0.2
80
T
j
= 175 °C
6 July 2012
0.4
Fig. 14. Input, output and reverse transfer capacitances
0.6
(pF)
C
7000
6000
5000
4000
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
0.8
T
- 1
j
N-channel TrenchMOS standard level FET
= 25 °C
V
SD
03ng71
C
C
C
(V)
oss
rss
iss
1.0
1
BUK7610-100B
10
V
© NXP B.V. 2012. All rights reserved
DS
(V)
03ng78
10
2
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