BUK9609-75A /T3 NXP Semiconductors, BUK9609-75A /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK9609-75A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-75A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 185 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 424 ns
• Part # Aliases: BUK9609-75A,118

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK9609-75A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9609-75A
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
Continuous current is limited by package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 30 August 2011
Conditions
T
R
T
T
see
T
see
T
T
I
V
pulsed; t
pulsed; t
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 75 A; V
= 100 °C; V
= 25 °C; V
Figure 1
= 25 °C; pulsed; t
Figure 3
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
Simplified outline
p
p
≤ 50 µs
≤ 10 µs; T
sup
j
j(init)
SOT404 (D2PAK)
≤ 175 °C
GS
≤ 75 V; R
GS
= 25 °C; unclamped
Figure 2
= 5 V; see
1
= 5 V; see
mb
mb
2
p
= 25 °C
≤ 10 µs;
3
GS
N-channel TrenchMOS logic level FET
= 50 Ω;
Figure
Figure 1
3;
BUK9609-75A
Graphic symbol
[1]
[1]
[1]
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
175
175
Version
SOT404
Max
75
75
10
75
75
440
230
15
75
440
562
D
S
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
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