BUK9609-75A /T3 NXP Semiconductors, BUK9609-75A /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK9609-75A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-75A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 185 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 424 ns
• Part # Aliases: BUK9609-75A,118

NXP Semiconductors
BUK9609-75A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
10
I
10
10
10
10
10
D
400
350
300
250
200
150
100
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
7
8
2
10
1
6
min
5
4
V
GS
typ
(V) =
6
4
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
(V)
DS
03nb41
2.2
3
(V)
10
Rev. 4 — 30 August 2011
3
Fig 6.
Fig 8.
R
C (pF)
(mΩ)
DSon
16000
14000
12000
10000
8000
6000
4000
2000
20
18
16
14
12
10
8
6
4
0
10
of gate-source voltage; typical values
as a function of drain-source voltage; typical
values
Drain-source on-state resistance as a function
Input, output and reverse transfer capacitances
2
−2
Ciss
Crss
Coss
N-channel TrenchMOS logic level FET
3
10
−1
4
BUK9609-75A
5
1
6
10
© NXP B.V. 2011. All rights reserved.
V
7
DS
V
GS
03nb40
03nb43
(V)
(V)
10
8
2
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