BUK9609-75A /T3 NXP Semiconductors, BUK9609-75A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK9609-75A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-75A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 185 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 424 ns
• Part # Aliases: BUK9609-75A,118

NXP Semiconductors
BUK9609-75A
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
R
(mΩ)
DSon
20
15
10
5
of drain current; typical values
0
50
V
GS
(V) = 3
100
150
3.2
200
3.4
(A)
I
S
3.6 3.8
120
100
250
80
60
40
20
0
0.0
All information provided in this document is subject to legal disclaimers.
300
03nb42
4
I
D
(A)
6
0.2
350
Rev. 4 — 30 August 2011
0.4
T
j
= 175 °C
Fig 14. Normalized drain-source on-state resistance
0.6
a
2.4
1.6
0.8
0
−60
factor as a function of junction temperature
T
0.8
j
= 25 °C
V
SD
03nb36
(V)
N-channel TrenchMOS logic level FET
1.0
0
BUK9609-75A
60
120
© NXP B.V. 2011. All rights reserved.
T
j
(°C)
03nb25
180
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