BUK7105-40ATE /T3 NXP Semiconductors, BUK7105-40ATE /T3 Datasheet - Page 10

• Manufacturer Part Number: BUK7105-40ATE /T3
• Description: MOSFET TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7105-40ATE /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 155 A
• Resistance Drain-source Rds (on): 0.005 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-426
• Fall Time: 110 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 272 W
• Rise Time: 115 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns
• Part # Aliases: BUK7105-40ATE,118

NXP Semiconductors
BUK7105-40ATE_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Forward voltage of temperature sense diode as
(mV)
V
100
(A)
700
600
500
400
F
I D
75
50
25
0
function of gate-source voltage; typical values
a function of junction temperature; typical
values
0
0
50
2
100
175 °C
4
T j = 25 °C
150
V GS (V)
T
03ni90
j
(°C)
03ne84
Rev. 02 — 10 February 2009
6
200
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Temperature coefficient of temperature sense
(mV/K)
V
−1.70
−1.60
−1.50
−1.40
(V)
S
GS
F
10
8
6
4
2
0
645
gate charge; typical values
diode as a function of forward voltage; typical
values
0
N-channel TrenchPLUS standard level FET
655
BUK7105-40ATE
40
V
DS
max
min
typ
= 14 V
665
80
32 V
Q
V
© NXP B.V. 2009. All rights reserved.
F
G
(mV)
(nC)
03ne85
03ni26
120
675
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