BUK7105-40ATE /T3 NXP Semiconductors, BUK7105-40ATE /T3 Datasheet - Page 11

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BUK7105-40ATE /T3

Manufacturer Part Number
BUK7105-40ATE /T3
Description
MOSFET TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7105-40ATE /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
155 A
Resistance Drain-source Rds (on)
0.005 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-426
Fall Time
110 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
272 W
Rise Time
115 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
155 ns
Part # Aliases
BUK7105-40ATE,118
NXP Semiconductors
BUK7105-40ATE_2
Product data sheet
Fig 17. Drain current as a function of source-drain diode voltage; typical values
100
(A)
I D
80
60
40
20
0
0.0
Rev. 02 — 10 February 2009
0.4
175 °C
0.8
T j = 25 °C
1.2
N-channel TrenchPLUS standard level FET
V SD (V)
03ni91
1.6
BUK7105-40ATE
© NXP B.V. 2009. All rights reserved.
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