BUK7105-40ATE /T3 NXP Semiconductors, BUK7105-40ATE /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK7105-40ATE /T3
• Description: MOSFET TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7105-40ATE /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 155 A
• Resistance Drain-source Rds (on): 0.005 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-426
• Fall Time: 110 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 272 W
• Rise Time: 115 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns
• Part # Aliases: BUK7105-40ATE,118

NXP Semiconductors
Table 6.
BUK7105-40ATE_2
Product data sheet
Symbol
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
D
S
SD
r
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
V
R
from upper edge of mounting base to
centre of die; T
from source lead to source bond pad;
T
I
see
I
V
S
S
j
DS
G(ext)
DS
= 25 °C
= 40 A; V
= 20 A; dI
Figure 17
= 30 V; R
= 30 V; T
= 10 Ω; T
Rev. 02 — 10 February 2009
GS
S
/dt = -100 A/µs; V
j
L
= 25 °C
= 0 V; T
j
= 1.2 Ω; V
= 25 °C
j
= 25 °C
j
= 25 °C;
GS
= 10 V;
GS
= -10 V;
N-channel TrenchPLUS standard level FET
BUK7105-40ATE
Min
-
-
-
-
-
-
-
-
-
Typ
35
115
155
110
2.5
7.5
0.85
96
224
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
-
-
-
1.2
-
-
Unit
ns
ns
ns
ns
nH
nH
V
ns
nC
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