BUK7105-40ATE /T3 NXP Semiconductors, BUK7105-40ATE /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK7105-40ATE /T3
• Description: MOSFET TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7105-40ATE /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 155 A
• Resistance Drain-source Rds (on): 0.005 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-426
• Fall Time: 110 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 272 W
• Rise Time: 115 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns
• Part # Aliases: BUK7105-40ATE,118

NXP Semiconductors
BUK7105-40ATE_2
Product data sheet
Fig 9.
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
g fs
(S)
90
60
30
0
5
4
3
2
1
0
−60
junction temperature
drain current; typical values
Gate-source threshold voltage as a function of
0
25
0
50
60
max
min
typ
75
120
I D (A)
T
j
03ni89
(°C)
03aa32
100
Rev. 02 — 10 February 2009
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(nF)
(A)
I
10
10
10
10
10
10
C
D
−1
−2
−3
−4
−5
−6
8
6
4
2
0
10
gate-source voltage
as a function of drain-source voltage; typical
values
0
−1
N-channel TrenchPLUS standard level FET
BUK7105-40ATE
2
1
min
typ
10
4
max
V
V
© NXP B.V. 2009. All rights reserved.
GS
DS
C
C
C
(V)
(V)
iss
oss
rss
03aa35
03ne67
10
6
2
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