BSS192 T/R NXP Semiconductors, BSS192 T/R Datasheet - Page 6
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BSS192 T/R
Manufacturer Part Number
BSS192 T/R
Description
MOSFET TAPE-7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192_T3.pdf
(12 pages)
Specifications of BSS192 T/R
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Fall Time
12 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
1000 mW
Rise Time
12 ns
Factory Pack Quantity
1000
Part # Aliases
BSS192,115
Philips Semiconductors
2002 May 22
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
I
Fig.10 Temperature coefficient of drain-source
k
D
= 200 mA; V
=
2.5
k
1.5
0.5
---------------------------------------- -
R
2
1
0
DSon
R
50
DSon
on-state resistance; typical values.
at 25 C
at T
GS
j
= 10 V.
0
50
100
T j (
MDA181
o
C)
150
6
Product specification
BSS192