BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 5
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BUK9620-55A /T3
Manufacturer Part Number
BUK9620-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9620-55A_T3.pdf
(13 pages)
Specifications of BUK9620-55A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
54 A
Resistance Drain-source Rds (on)
0.018 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
93 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
118 W
Rise Time
124 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
92 ns
Part # Aliases
BUK9620-55A,118
NXP Semiconductors
6. Characteristics
Table 6.
BUK9620-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
V
see
V
T
V
R
from drain lead 6 mm from package to
centre of die ; T
from upper edge of drain mounting base
to centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure 15
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 4.5 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 02 — 4 June 2010
12; see
12; see
D
D
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs;
D
= 25 A; T
= 25 A; T
GS
GS
L
DS
= 25 A; T
= 0 V; T
= V
= V
= V
= 25 A; T
Figure 14
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
j
j
= 25 °C
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
j
GS
GS
GS
Figure 13
Figure 13
= 25 °C
; T
; T
; T
j
j
j
= 25 °C;
= 175 °C;
= 25 °C;
j
j
j
j
j
j
j
j
= 175 °C;
= 25 °C;
= -55 °C;
= 25 °C
j
= 25 °C
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
j
= 25 °C
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9620-55A
Min
55
50
0.5
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
0.05
-
2
2
-
-
15
17
1660
290
194
19
124
92
93
4.5
2.5
7.5
0.85
52
81
© NXP B.V. 2010. All rights reserved.
346
-
Max
-
-
-
2
2.3
10
500
100
100
21
40
18
20
2210
266
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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