BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 7
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BUK9620-55A /T3
Manufacturer Part Number
BUK9620-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9620-55A_T3.pdf
(13 pages)
Specifications of BUK9620-55A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
54 A
Resistance Drain-source Rds (on)
0.018 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
93 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
118 W
Rise Time
124 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
92 ns
Part # Aliases
BUK9620-55A,118
NXP Semiconductors
BUK9620-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
(A)
V
I
D
GS(th)
(V)
120
100
80
60
40
20
2.5
1.5
0.5
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 25 °C
60
max
typ
min
4
120
T
V
j
All information provided in this document is subject to legal disclaimers.
= 175 °C
GS
03aa33
T
j
( ° C)
(V)
03nc89
180
6
Rev. 02 — 4 June 2010
Fig 10. Gate-source voltage as a function of gate
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
DSon
V
(V)
GS
50
40
30
20
10
5
4
3
2
1
0
charge; typical values
of drain current; typical values
0
0
V
GS
(V) =
N-channel TrenchMOS logic level FET
3
3.2
10
50
3.4
V
3.6
BUK9620-55A
DD
3.8
= 14V
4
100
20
© NXP B.V. 2010. All rights reserved.
Q
V
I
DD
G
D
(nC)
(A)
= 44V
03nc87
03nc92
5
150
30
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