BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 8
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BUK9620-55A /T3
Manufacturer Part Number
BUK9620-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9620-55A_T3.pdf
(13 pages)
Specifications of BUK9620-55A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
54 A
Resistance Drain-source Rds (on)
0.018 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
93 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
118 W
Rise Time
124 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
92 ns
Part # Aliases
BUK9620-55A,118
NXP Semiconductors
BUK9620-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
120
100
80
60
40
20
0
120
0.0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
180
Rev. 02 — 4 June 2010
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
C (pF)
1.0
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
V
−2
C
C
C
SD
iss
oss
rss
(V)
03nc86
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9620-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nc93
(V)
10
2
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