IRFW720BTM Fairchild Semiconductor, IRFW720BTM Datasheet - Page 3

• Manufacturer Part Number: IRFW720BTM
• Description: MOSFET 400V N-Channel B-FET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFW720BTM

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 35 ns
• Forward Transconductance Gfs (max / Min): 2.8 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.13 W
• Rise Time: 35 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 35 ns

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1000
800
600
400
200
10
10
10
7
6
5
4
3
2
1
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
3
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
, Drain Current [A]
0
0
C
C
C
V
iss
rss
oss
GS
V
= 20V
GS
6
= 10V
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
9
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
J
GS
ds
= 25 ℃
= shorted)
= 0 V
12
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
25
0.4
150
o
C
3
o
C
4
150℃
V
V
and Temperature
Q
SD
GS
0.6
G
, Source-Drain voltage [V]
V
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
DS
V
= 320V
DS
6
-55
V
= 200V
DS
25℃
o
C
= 80V
0.8
6
9
1.0
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250 μ s Pulse Test
※ Note : I
8
DS
GS
= 40V
= 0V
12
1.2
D
= 3.3 A
Rev. B, November 2001
10
1.4
15