BUK7606-55A /T3 NXP Semiconductors, BUK7606-55A /T3 Datasheet - Page 2

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BUK7606-55A /T3

Manufacturer Part Number
BUK7606-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7606-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Resistance Drain-source Rds (on)
0.0063 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
110 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
115 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
155 ns
Part # Aliases
BUK7606-55A,118
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7606-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7606-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
DS(AL)S
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 1 February 2011
Simplified outline
SOT404 (D2PAK)
Conditions
I
R
T
D
…continued
j(init)
GS
= 75 A; V
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
sup
GS
≤ 55 V;
N-channel TrenchMOS standard level FET
= 10 V;
Graphic symbol
BUK7606-55A
mbb076
G
Min
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
-
Version
SOT404
Max Unit
1.1
2 of 13
J

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