BUK7606-55A /T3 NXP Semiconductors, BUK7606-55A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK7606-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7606-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 154 A
• Resistance Drain-source Rds (on): 0.0063 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 110 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 115 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns
• Part # Aliases: BUK7606-55A,118

NXP Semiconductors
BUK7606-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
120
100
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 175 °C
60
max
min
typ
4
120
T
V
j
= 25 °C
GS
All information provided in this document is subject to legal disclaimers.
T
j
(V)
(°C)
03aa32
03nf27
Rev. 03 — 1 February 2011
180
6
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
10
12
8
6
4
2
0
8
4
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
V
40
40
DS
V
= 14 V
GS
BUK7606-55A
(V) = 5.5
80
80
V
DS
6
Q
© NXP B.V. 2011. All rights reserved.
6.5
= 44 V
I
G
D
(nC)
(A)
10
7
8
03nf25
03nf30
120
120
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