SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 10
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SI7407DN-T1
Manufacturer Part Number
SI7407DN-T1
Description
MOSFET 12V 15.6A 1.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI7407DN-T1.pdf
(12 pages)
Specifications of SI7407DN-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
9.9 A
Resistance Drain-source Rds (on)
12 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Fall Time
50 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 W
Rise Time
50 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
200 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7407DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
AN822
Vishay Siliconix
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
www.vishay.com
4
105
95
85
75
65
55
45
0.00
Figure 5. Spreading Copper - Si7401DN
0 %
0.25
Spreading Copper (sq. in.)
0.50
0.75
1.00
100 %
1.25
1.50
1.75
50 %
2.00
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps r
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Figure 6. Spreading Copper - Junction-to-Ambient Performance
130
120
110
100
90
80
70
60
50
0.00
Spreading Copper (sq. in.)
0.25
DS(ON)
0.50
50 %
low, and permits the device to
0.75
1.00
100 %
1.25
Document Number 71681
1.50
1.75
03-Mar-06
0 %
2.00