SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 2

• Manufacturer Part Number: SI7407DN-T1
• Description: MOSFET 12V 15.6A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7407DN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 9.9 A
• Resistance Drain-source Rds (on): 12 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 50 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 200 ns

Si7407DN
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T
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2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery
Time
b
30
25
20
15
10
5
0
0
a
a
V
V
DS
1
Output Characteristics
GS
a
- Drain-to-Source Voltage (V)
J
= 5 thru 2 V
= 25 °C, unless otherwise noted
a
2
Symbol
R
V
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
gd
rr
fs
gs
r
f
g
A
= 25 °C, unless otherwise noted
3
V
DS
1.5 V
V
I
D
DS
1 V
≅ - 1 A, V
= - 6 V, V
I
V
V
F
= - 12 V, V
V
V
V
V
GS
GS
V
= - 3.2 A, di/dt = 100 A/µs
V
DS
I
DS
DS
S
V
DS
GS
DS
DD
= - 3.2 A, V
= - 4.5 V, I
= - 2.5 V, I
Test Conditions
4
≤ - 5 V, V
= V
= - 6 V, I
= - 12 V, V
= - 1.8 V, I
= 0 V, V
= - 6 V, R
GS
GEN
GS
GS
= - 4.5 V, I
, I
= - 4.5 V, R
D
= 0 V, T
D
GS
GS
D
D
= - 400 µA
= - 15.6 A
GS
GS
D
= - 15.6 A
= - 13.5 A
L
= ± 8 V
= - 4.5 V
= - 5 A
= 6 Ω
= 0 V
= 0 V
D
J
= - 15.6 A
= 85 °C
g
= 6 Ω
30
25
20
15
10
5
0
0.0
- 0.40
Min.
- 30
0.4
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
25 °C
T
C
0.8
0.009
0.013
0.019
Typ.
- 0.7
200
165
= 125 °C
52
39
11
30
50
60
6
S-80581-Rev. D, 17-Mar-08
Document Number: 71912
1.2
± 100
0.012
0.016
0.024
- 55 °C
Max.
- 1.0
- 1.2
300
250
- 1
- 5
59
45
75
90
1.6
Unit
nA
µA
nC
ns
Ω
V
A
S
V
2.0