SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 5
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SI7407DN-T1
Manufacturer Part Number
SI7407DN-T1
Description
MOSFET 12V 15.6A 1.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI7407DN-T1.pdf
(12 pages)
Specifications of SI7407DN-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
9.9 A
Resistance Drain-source Rds (on)
12 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Fall Time
50 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 W
Rise Time
50 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
200 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7407DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 71912
S-80581-Rev. D, 17-Mar-08
0.01
0.1
2
1
http://www.vishay.com/ppg?71912.
10
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
A
= 25 °C, unless otherwise noted
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7407DN
www.vishay.com
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