Si87xxDIP8-KIT Silicon Labs, Si87xxDIP8-KIT Datasheet - Page 5
Si87xxDIP8-KIT
Manufacturer Part Number
Si87xxDIP8-KIT
Description
Interface Development Tools DIP-8 Evaluation Kit
Manufacturer
Silicon Labs
Type
Isolatorsr
Datasheet
1.SI87XXSOIC8-KIT.pdf
(36 pages)
Specifications of Si87xxDIP8-KIT
Rohs
yes
Product
Evaluation Kits
Tool Is For Evaluation Of
Si87xxDIP8
Table 2. Electrical Characteristics (Continued)
V
AC Switching Parameters (V
Maximum Data Rate
Minimum Pulse Width
Propagation Delay
(Low-to-High)
Propagation Delay
(High-to-Low)
Pulse Width Distortion
Propagation Delay
Skew
Rise Time
Fall Time
Device Startup Time
Common Mode
Transient Immunity
DD
= 5 V; GND = 0 V; T
Parameter
A
= –40 to +125 °C; typical specs at 25 °C
Symbol
t
PSK(p-p)
t
F
MPW
PWD
CMTI
START
t
t
DATA
PLH
PHL
t
t
R
F
DD
= 5 V, R
| t
Si87xxA devices
Si87xxB devices
Si87xxC devices
Si87xxA devices
Si87xxB devices
Si87xxC devices
C
C
t
ference in prop delays between dif-
ferent units operating at same supply
voltage, load, and ambient temp.
C
C
Output = low or high
I
I
I
PSK(P-P)
F
F
F
L
L
L
L
PLH
= 3 mA for Si87xxA devices
= 6 mA for Si87xxB devices
= 3 mA for Si87xxC devices
= 15 pF using 350 pull-up
= 15 pF using 350 pull-up
= 15 pF using 350 pull-up
= 15 pF using 350 pull-up
– t
L
= 350 , C
PHL
is the magnitude of the dif-
Test Condition
Preliminary Rev. 0.5
|
L
= 15 pF)
Min
DC
DC
DC
66
66
—
—
—
—
—
—
—
20
35
20
1
Typ
—
—
—
—
—
—
—
—
—
—
15
—
35
50
35
5
Max
Si87xx
15
15
60
60
20
20
40
—
—
—
—
—
—
—
—
1
kV/µs
kV/µs
kV/µs
M
M
M
Unit
ns
ns
µs
ns
ns
ns
ns
ns
ns
µs
BPS
BPS
BPS
5