BF840 T/R NXP Semiconductors, BF840 T/R Datasheet - Page 3

• Manufacturer Part Number: BF840 T/R
• Description: Transistors Bipolar - BJT TRANS MED TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BF840 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 4 V
• Collector-emitter Saturation Voltage: 4 V
• Gain Bandwidth Product Ft: 380 MHz
• Dc Collector/base Gain Hfe Min: 67 at 1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.025 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BF840,215

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 13
R
I
I
h
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
BE
NPN medium frequency transistor
th(j-a)
re
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
E
C
C
C
C
C
= 0; V
= 0; V
= 1 mA; V
= 1 mA; V
= 0; V
= 1 mA; V
CB
EB
CB
= 20 V
= 4 V
= 10 V; f = 1 MHz
CONDITIONS
CE
CE
CE
= 10 V
= 10 V
= 10 V; f = 100 MHz
3
note 1
CONDITIONS
−
−
67
675
−
−
MIN.
VALUE
500
−
−
−
725
0.3
380
TYP.
Product data sheet
100
100
222
775
−
−
MAX.
BF840
UNIT
K/W
nA
nA
mV
pF
MHz
UNIT