BF840 T/R NXP Semiconductors, BF840 T/R Datasheet - Page 3
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BF840 T/R
Manufacturer Part Number
BF840 T/R
Description
Transistors Bipolar - BJT TRANS MED TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BF840_T3.pdf
(6 pages)
Specifications of BF840 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
4 V
Collector-emitter Saturation Voltage
4 V
Gain Bandwidth Product Ft
380 MHz
Dc Collector/base Gain Hfe Min
67 at 1 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.025 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BF840,215
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 13
R
I
I
h
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
BE
NPN medium frequency transistor
th(j-a)
re
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
E
C
C
C
C
C
= 0; V
= 0; V
= 1 mA; V
= 1 mA; V
= 0; V
= 1 mA; V
CB
EB
CB
= 20 V
= 4 V
= 10 V; f = 1 MHz
CONDITIONS
CE
CE
CE
= 10 V
= 10 V
= 10 V; f = 100 MHz
3
note 1
CONDITIONS
−
−
67
675
−
−
MIN.
VALUE
500
−
−
−
725
0.3
380
TYP.
Product data sheet
100
100
222
775
−
−
MAX.
BF840
UNIT
K/W
nA
nA
mV
pF
MHz
UNIT