PBSS305PX T/R NXP Semiconductors, PBSS305PX T/R Datasheet - Page 7

• Manufacturer Part Number: PBSS305PX T/R
• Description: Transistors Bipolar - BJT PNP 80V 4A
• Manufacturer: NXP Semiconductors

Specifications of PBSS305PX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 80 V
• Collector- Emitter Voltage Vceo Max: - 80 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 330 mV
• Maximum Dc Collector Current: - 8 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 45 at - 5 A at - 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 4 A
• Dc Current Gain Hfe Max: 280 at - 0.5 A at - 2 V
• Maximum Power Dissipation: 2.1 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS305PX,115

NXP Semiconductors
PBSS305PX_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.2
BE
−0.8
−0.4
600
400
200
−10
−10
0
0
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
−10
−10
2
2
−10
−10
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3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 8 December 2009
−10
−10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
−1.2
−0.8
−0.4
C
−14
−12
−10
−8
−6
−4
−2
−10
0
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
80 V, 4.0 A PNP low V
C
−1
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−2
−10
PBSS305PX
−3
2
CEsat
I
B
(mA) = −600
−10
© NXP B.V. 2009. All rights reserved.
−540 −480
−420 −360
−300
−180
−4
(BISS) transistor
006aaa635
006aaa633
V
3
I
C
CE
−240
−120
(mA)
−60
(V)
−10
−5
4
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