BCW60B /T3 NXP Semiconductors, BCW60B /T3 Datasheet - Page 4
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BCW60B /T3
Manufacturer Part Number
BCW60B /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.BCW60B_T3.pdf
(6 pages)
Specifications of BCW60B /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
32 V
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
20 at 10 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BCW60B,235
NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 22
Plastic surface mounted package; 3 leads
NPN general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
4
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
BCW60 series
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23