BC817-16 /T3 NXP Semiconductors, BC817-16 /T3 Datasheet - Page 15
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BC817-16 /T3
Manufacturer Part Number
BC817-16 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-13
Manufacturer
NXP Semiconductors
Datasheet
1.BC817-16W_T3.pdf
(19 pages)
Specifications of BC817-16 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.5 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC817-16,235
NXP Semiconductors
Fig 17. Package outline SOT54 variant
BC817_BC817W_BC337_6
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
SOT54 variant
OUTLINE
VERSION
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
Rev. 06 — 17 November 2009
REFERENCES
0
4.2
3.6
E
2.54
A
e
JEITA
scale
2.5
1.27
e 1
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
14.5
12.7
5 mm
L
L 2
L 1
L 1
max
2.5
(1)
max
2.5
L 2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
SOT54 variant
04-06-28
05-01-10
b
c
e 1
e 1
e
15 of 19