MT46V64M16P-6T IT:A TR Micron Technology Inc, MT46V64M16P-6T IT:A TR Datasheet - Page 55
![IC DDR SDRAM 1GBIT 6NS 66TSOP](/photos/7/22/72261/557-54-tsop_sml.jpg)
MT46V64M16P-6T IT:A TR
Manufacturer Part Number
MT46V64M16P-6T IT:A TR
Description
IC DDR SDRAM 1GBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V64M16P-6T IT:A TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 27:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Command
Command
Command
Nonconsecutive READ Bursts
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank,
Bank,
Bank,
Col n
Col n
READ
Col n
READ
READ
T0
T0
T0
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
55
DO
n
T2n
T2n
DO
n
Bank,
Col b
Bank,
Bank,
Col b
Col b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
READ
READ
READ
T3
T3
T3
t
DQSQ.
DO
n
T3n
T3n
T3n
1Gb: x4, x8, x16 DDR SDRAM
T4
T4
T4
NOP
NOP
NOP
Transitioning Data
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
T5
T5
NOP
NOP
NOP
DO
b
T5n
T5n
Operations
Don’t Care
DO
b
T6
T6
T6
NOP
NOP
NOP
DO
b
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