MT46V64M16P-75:A TR Micron Technology Inc, MT46V64M16P-75:A TR Datasheet - Page 66
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MT46V64M16P-75:A TR
Manufacturer Part Number
MT46V64M16P-75:A TR
Description
IC DDR SDRAM 1GBIT 7.5NS 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V64M16P-75:A TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
250mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 37:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Consecutive WRITE-to-WRITE
Notes:
t DQSS (NOM)
Command
Address
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t DQSS
NOP
DI
T1
b
66
T1n
WRITE
Bank,
Col n
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2n
NOP
1Gb: x4, x8, x16 DDR SDRAM
T3
DI
n
T3n
Transitioning Data
©2003 Micron Technology, Inc. All rights reserved.
NOP
T4
T4n
Operations
NOP
T5
Don’t Care