M27C2001-10F1 STMicroelectronics, M27C2001-10F1 Datasheet - Page 6
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M27C2001-10F1
Manufacturer Part Number
M27C2001-10F1
Description
IC EPROM 2MBIT 100NS 32CDIP
Manufacturer
STMicroelectronics
Datasheets
1.M27C2001-10B1.pdf
(25 pages)
2.M27C2001-12F1.pdf
(10 pages)
3.M27C1001-15F1.pdf
(24 pages)
Specifications of M27C2001-10F1
Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
2M (256K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
2M
Organization
256K×8
Package Type
FDIP32W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
100 ns
Time, Fall
≤20 ns
Time, Programmable
100 μs
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
-0.3 V (Min.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
11.5 V (Min.)
Voltage, Supply
5 V
Memory Configuration
256K X 8
Access Time
55ns
Supply Voltage Range
4.5V To 5V
Memory Case Style
FDIPW
No. Of Pins
32
Rohs Compliant
Yes
Operating Temperature Range
0°C To +70°C
Ic Interface Type
Parallel
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1639-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M27C2001-10F1
Manufacturer:
ST
Quantity:
2 100
Part Number:
M27C2001-10F1
Manufacturer:
ST
Quantity:
20 000
Part Number:
M27C2001-10F1L
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
Table 8.
1. V
Table 9.
1. V
2. In case of 55ns speed see High Speed AC measurement conditions.
3. Sampled only, not 100% tested.
15/25
t
t
Symbol
GHQZ
EHQZ
t
t
Symbol
t
t
GLQV
AXQX
AVQV
ELQV
CC
CC
V
V
V
V
I
I
V
I
CC
PP
OH
LI
OL
IH
ID
IL
must be applied simultaneously with or before V
must be applied simultaneously with or before V
(3)
(3)
t
Programming Mode DC Characteristics
(T
Read Mode AC Characteristics
(T
t
ACC
t
t
Alt
t
t
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
OE
OH
CE
DF
DF
A
A
= 25°C; V
= 0 to 70°C or –40 to 85°C; V
Address Valid
to Output
Valid
Chip Enable
Low to Output
Valid
Output Enable
Low to Output
Valid
Chip Enable
High to Output
Hi-Z
Output Enable
High to Output
Hi-Z
Address
Transition to
Output
Transition
Parameter
Parameter
CC
= 6.25V ± 0.25V; V
Condition
E = V
E = V
G = V
G = V
G = V
G = V
E = V
E = V
Test
IL
IL
IL
IL
IL
IL
IL
IL
,
,
PP
PP
CC
(1)
Min
and removed simultaneously or after V
and removed simultaneously or after V
PP
0
0
0
Test Condition
= 5V ± 5% or 5V ± 10%; V
I
-55
OH
I
0 V
OL
= 12.75V ± 0.25V)
E = V
(2)
= –400µA
= 2.1mA
Max
IN
(1)
55
55
30
30
30
IL
V
IH
Min
0
0
0
-70
M27C2001
Max
70
70
35
30
30
–0.3
11.5
Min
2.4
2
Min Max
0
0
0
PP
-80
= V
PP
PP
80
80
40
30
30
.
.
V
CC
CC
Max
12.5
±10
0.8
0.4
)
50
50
+ 0.5
Min
0
0
0
-90
Max
M27C2001
90
90
40
30
30
Unit
mA
mA
µA
V
V
V
V
V
Unit
ns
ns
ns
ns
ns
ns