UPD44324365F5-E40-EQ2 Renesas Electronics America, UPD44324365F5-E40-EQ2 Datasheet - Page 23

• Manufacturer Part Number: UPD44324365F5-E40-EQ2
• Description: SRAM QDRII 36MBIT 165-PBGA
• Manufacturer: Renesas Electronics America

Specifications of UPD44324365F5-E40-EQ2

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Read and Write Timing
Data out
Remarks 1. Q01 refers to output from address A0+0.
Address
Data in
CQ#
R, W#
CQ
C#
C
LD#
K#
K
2. Outputs are disabled (high impedance) 2.5 clocks after the last READ (LD# = LOW, R, W# = HIGH) is
3. In this example, if address A4=A3, data Q41=D31 and Q42=D32.
Qx2
1
Q02 refers to output from the next internal burst address following A0, i.e., A0+1.
input in the sequences of [READ]-[NOP] and [READ]-[WRITE].
Write data is forwarded immediately as read results.
NOP
TKHCH
TKHKL
TKHKL
TIVKH
TKLKH
TAVKH TKHAX
TKLKH
2
A0
(burst of 2)
TCHCQX
READ
TCHCQV
TKHKH
TKHKH
TKHIX
TCHCQX
TCHCQV
μ
PD44324085-A, 44324095-A, 44324185-A, 44324365-A
3
A1
TCHQX1
TKHK#H
(burst of 2)
TKHK#H TK#HKH
READ
Data Sheet M19873EJ1V0DS
TCHQX
Q01
4
A2
(burst of 2)
WRITE
TCHQV
Q02
TDVKH
TK#HKH
TCHQV
D21
Q11
A3
5
(burst of 2)
TKHDX
WRITE
Q12
D22
TCHQX
D31
TCHQZ
A4
6
TKHCH
(burst of 2)
TDVKH TKHDX
READ
D32
7
NOP
TCQHQV
Q41
8
TCQHQX
Q42
23