MT45W1MW16BAFB-706 WT TR Micron Technology Inc, MT45W1MW16BAFB-706 WT TR Datasheet - Page 15
MT45W1MW16BAFB-706 WT TR
Manufacturer Part Number
MT45W1MW16BAFB-706 WT TR
Description
IC PSRAM 16MBIT 70NS 54FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W1MW16BABB-706_WT_TR.pdf
(60 pages)
Specifications of MT45W1MW16BAFB-706 WT TR
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Figure 12:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
DQ[15:0]
LB#/UB#
A[20:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Refresh Collision During WRITE Operation
Additional WAIT states inserted to allow refresh completion.
High-Z
ADDRESS
VALID
Note:
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
15
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[0]
D[1]
Bus Operating Modes
D[2]
©2003 Micron Technology, Inc. All rights reserved.
D[3]
DON’T CARE
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