MT46V8M16P-75:D TR Micron Technology Inc, MT46V8M16P-75:D TR Datasheet - Page 74
![IC DDR SDRAM 128MBIT 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V8M16P-75:D TR
Manufacturer Part Number
MT46V8M16P-75:D TR
Description
IC DDR SDRAM 128MBIT 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M8TG-6T_LD_TR.pdf
(81 pages)
Specifications of MT46V8M16P-75:D TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (8Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1211-2
MT46V8M16P-75:D TR
MT46V8M16P-75:D TR
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Figure 47:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
COMMAND
ADDRESS
BA0, BA1
DQ 5
DQS
CK#
CKE
A10
DM
CK
t
t
WRITE – DM Operation
IS
IS
NOP
T0
t
1
IH
t
IH
Notes:
t
Bank x
t
IS
IS
Row
ACT
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 48 on page 75 for detailed DQ timing.
t
t
IH
IH
times.
t
CK
t
t
RCD
RAS
NOP
T2
1
t
CH
t
CL
WRITE
Bank x
t
3
IS
Col n
T3
t
t
DQSS (NOM)
2
IH
t
WPRES
74
t
DS
t
WPRE
NOP
T4
DI
b
1
t
DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
128Mb: x4, x8, x16 DDR SDRAM
t
DQSH
1
T5n
t
WPST
DON’T CARE
NOP
T6
1
©2004 Micron Technology, Inc. All rights reserved.
t WR
NOP
T7
TRANSITIONING DATA
1
Operations
ALL BANKS
ONE BANK
Bank x
T8
PRE
4
t RP
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