W9425G6EH-5 Winbond Electronics, W9425G6EH-5 Datasheet - Page 26
![IC DDR-400 SDRAM 256MB 66TSSOPII](/photos/28/21/282152/w9425g6eh-5_sml.jpg)
W9425G6EH-5
Manufacturer Part Number
W9425G6EH-5
Description
IC DDR-400 SDRAM 256MB 66TSSOPII
Manufacturer
Winbond Electronics
Datasheet
1.W9425G6EH-5.pdf
(54 pages)
Specifications of W9425G6EH-5
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
250MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
W9425G6EH-5
Manufacturer:
WINBOND
Quantity:
1 728
Part Number:
W9425G6EH-5
Manufacturer:
WINBOND/华邦
Quantity:
20 000
9.5
I
I
I
I
I
I
I
I
SYM.
DD4W
DD2Q
I
I
DD2P
DD2F
DD2N
DD3P
DD3N
DD4R
I
I
I
DD0
DD1
DD5
DD6
DD7
DC Characteristics
Operating current: One Bank Active-Precharge; t
t
cycle; Address and control inputs changing once per clock cycle
Operating current: One Bank Active-Read-Precharge; Burst = 2;
t
control inputs changing once per clock cycle.
Precharge Power Down standby current: All Banks Idle; Power
down mode; CKE < V
DQS and DM
Idle floating standby current: CS > V
CKE > V
per clock cycle; Vin = Vref for DQ, DQS and DM
Idle standby current: CS > V
min; t
once per clock cycle; Vin > V
DQS and DM
Idle quiet standby current: CS > V
> V
stable; Vin > V
Active Power Down standby current: One Bank Active; Power
down mode; CKE < V
Active standby current: CS > V
Bank Active-Precharge; t
and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
Operating current: Burst = 2; Reads; Continuous burst; One
Bank Active; Address and control inputs changing once per
clock cycle; CL=3; t
Operating current: Burst = 2; Write; Continuous burst; One Bank
Active; Address and control inputs changing once per clock
cycle; CL = 3; t
twice per clock cycle
Auto Refresh current: t
Self Refresh current: CKE < 0.2V
Random Read current: 4 Banks Active Read with activate every
20nS, Auto-precharge Read every 20 nS; Burst = 4; t
I
cycle; Address changing once per clock cycle
CK
RC
OUT
IH
= t
= t
= 0mA; DQ, DM and DQS inputs changing twice per clock
CK
min; t
CK
RC
= t
IH
min; DQ, DM and DQS inputs changing twice per clock
min; CL = 3; t
min; Address and other control inputs changing once
CK
CK
min; Address and other control inputs changing
= t
REF
CK
CK
= t
for DQ, DQS and DM
CK
min; Address and other control inputs
CK
IL
IL
= t
RC
CK
min; DQ, DM and DQS inputs changing
max; t
max; t
PARAMETER
RC
CK
= t
= t
= t
min; I
CK
RFC
IH
CK
CK
IH
RAS
min or Vin < V
min; I
min
= t
min; All Banks Idle; CKE > V
= t
IH
OUT
max; t
min; CKE > V
CK
CK
IH
OUT
= 0mA
IH
min; All Banks Idle; CKE
min; Vin = V
min
min; All Banks Idle;
= 0 mA; Address and
CK
= t
IL
CK
max for DQ,
RC
IH
min; DQ, DM
- 26 -
REF
min; One
= t
RCD
RC
for DQ,
= 3;
min;
IH
110
150
210
210
190
300
20
45
45
40
20
70
-4
3
Publication Release Date:Dec. 03, 2008
MAX.
-5/-5I
110
150
180
180
190
300
20
45
45
40
20
70
3
W9425G6EH
-6/-6I
110
150
170
170
190
300
20
45
45
40
20
70
3
UNIT
mA
Revision A08
NOTES
7, 9
7, 9
7
7
7
7
7
7
7