W9425G6EH-5 Winbond Electronics, W9425G6EH-5 Datasheet - Page 30

IC DDR-400 SDRAM 256MB 66TSSOPII

W9425G6EH-5

Manufacturer Part Number
W9425G6EH-5
Description
IC DDR-400 SDRAM 256MB 66TSSOPII
Manufacturer
Winbond Electronics
Datasheet

Specifications of W9425G6EH-5

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
250MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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(16) t
(17) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
(18) t
(19) For command/address input slew rate ≥1.0 V/nS.
(20) For command/address input slew rate ≥0.5 V/nS and <1.0 V/nS.
(21) For CLK & CLK slew rate ≥1.0 V/nS (single--ended).
(22) These parameters guarantee device timing, but they are not necessarily tested on each device. They may be
(23) Slew Rate is measured between V
guaranteed by device design or tester correlation.
AC
DAL
0 V Differential
and t
= (t
WR
DQSCK
V
/t
ID(AC)
CLK
CLK
V
CK
V
V
ISO
SS
SS
) + (t
depend on the clock jitter. These timing are measured at stable clock.
V
ICK
RP
V
/t
X
CK
)
V
ISO(min)
OH
V
(ac) and V
V
ICK
X
OL
(ac).
- 30 -
V
X
V
ISO(max)
V
ICK
Publication Release Date:Dec. 03, 2008
V
X
V
ICK
W9425G6EH
V
X
V
ID(AC)
Revision A08

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