XCF128XFTG64C Xilinx Inc, XCF128XFTG64C Datasheet

IC PROM SRL 128M GATE 64-FTBGA

XCF128XFTG64C

Manufacturer Part Number
XCF128XFTG64C
Description
IC PROM SRL 128M GATE 64-FTBGA
Manufacturer
Xilinx Inc
Datasheet

Specifications of XCF128XFTG64C

Memory Size
128Mb
Programmable Type
In System Programmable
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Access Time
85ns
Supply Voltage Range
1.7V To 2V
Memory Case Style
FTBGA
No. Of Pins
64
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC (15-Dec-2010)
Package /
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
122-1578

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DS617 (v3.0.1) January 07, 2010
Features
Description
A reliable compact high-performance configuration
bitstream storage and delivery solution is essential for the
high-density FPGAs. Platform Flash XL is the industry's
highest performing configuration and storage device and is
specially optimized for high-performance FPGA
configuration. Platform Flash XL integrates 128 Mb of
in-system programmable flash storage and performance
features for configuration within a small-footprint FT64
package
dedicated I/O power supply enable Platform Flash XL to
mate seamlessly with the native SelectMAP configuration
interface. A wide, 16-bit data bus delivers the FPGA
configuration bitstream at speeds up to 800 Mb/s without
wait states. See UG438, Platform Flash XL Configuration
and Storage Device User Guide, for system-level usage and
performance considerations.
Platform Flash XL is supported for use with Virtex-5 or Virtex-6
FPGAs only. Use with older Virtex families, Spartan® families,
or AES encrypted bitstreams is not supported.
© 2007–2010 Xilinx, Inc. XILINX, the Xilinx logo, Virtex, Spartan, ISE, and other designated brands included herein are trademarks of Xilinx in the United States and other
countries. PCI, PCIe and PCI Express are trademarks of PCI-SIG and used under license. All other trademarks are the property of their respective owners.
DS617 (v3.0.1) January 07, 2010
Product Specification
In-System Programmable Flash Memory Optimized for
Virtex®-5 or Virtex-6 FPGA Configuration
High-Performance FPGA Bitstream Transfer up to
800 Mb/s (50 MHz × 16-bits), Ideal for
PCI Express® Endpoint Applications
MultiBoot Bitstream, Design Revision Storage
FPGA Configuration Synchronization (READY_WAIT)
Handshake Signal
ISE® Software Support for In-System Programming via
Xilinx® JTAG Cables
Standard NOR-Flash Interface for Access to Code or
Data Storage
Operation over Full Industrial Temperature Range
(–40°C to +85°C)
Common Flash Interface (CFI)
Low-Power Advanced CMOS NOR-Flash Process
Endurance of 10,000 Program/Erase Cycles Per Block
Power Supplies
Industry-Standard Core Power Supply Voltage
(V
3.3V or 2.5V I/O (V
(Figure
DD
) = 1.8V
5). Power-on burst read mode and
DDQ
R
) Power Supply Voltage
8
8
Platform Flash XL High-Density Configuration
www.xilinx.com
Platform Flash XL is a non-volatile flash storage solution,
optimized for FPGA configuration. The device provides a
READY_WAIT signal that synchronizes the start of the FPGA
configuration process, improving both system reliability and
simplifying board design. Platform Flash XL can download an
XC5VLX330 bitstream (79,704,832 bits) in less than 100 ms,
making the configuration performance of Platform Flash XL
ideal for PCI Express endpoints and other high-performance
applications.
Platform Flash XL is a single-chip configuration solution with
additional system-level capabilities. A standard NOR flash
interface
(CFI) queries provide industry-standard access to the device
memory space. The Platform Flash XL's 128 Mb capacity can
typically hold one or more FPGA bitstreams. Any memory
space not used for bitstream storage can be used to hold
general purpose data or embedded processor code.
Memory Organization
Synchronous/Asynchronous Read Modes
Protection
Security
Small-Footprint (10 mm × 13 mm) FT64 Packaging
128-Mb Main Array Capacity
16-bit Data Bus
Multiple 8-Mb Bank Architecture for Dual
Erase/Program and Read Operation
127 Regular 1-Mb Main Blocks
4 Small 256-Kb Parameter Blocks
Power-On in Synchronous Burst Read Mode
Asynchronous Random Access Mode
Accelerated Asynchronous Page Read Mode
Default Block Protection at Power-Up
Hardware Write Protection (when V
Unique Device Number (64-bits)
One-Time-Programmable (OTP) Registers
(Figure
2) and support for common flash interface
and Storage Device
Product Specification
PP
= V
SS
)
1

Related parts for XCF128XFTG64C

XCF128XFTG64C Summary of contents

Page 1

R DS617 (v3.0.1) January 07, 2010 Features • In-System Programmable Flash Memory Optimized for Virtex®-5 or Virtex-6 FPGA Configuration • High-Performance FPGA Bitstream Transfer up to 800 Mb/s (50 MHz × 16-bits), Ideal for PCI Express® Endpoint Applications • MultiBoot ...

Page 2

R X-Ref Target - Figure 1 Platform Flash XL READY_WAIT FPGA Design (.bit) File Notes: 1. System considerations can lower the configuration clock frequency below the maximum clock frequency for the device. To determine the maximum configuration clock frequency, check ...

Page 3

R Flash Memory Architecture Overview Platform Flash 128- × 16) non-volatile flash memory. The device is in-system programmable with a 1.8V core (V ) power supply. A separate I enables I/O operation at ...

Page 4

R X-Ref Target - Figure 4 Parameter DS617 (v3.0.1) January 07, 2010 Product Specification Platform Flash XL High-Density Configuration and Storage Device Address 7FFFFFh 16 Kword 7FC000h 7F3FFFh 16 Kword 7F0000h 7EFFFFh Bank 64 Kword 7E0000h 78FFFFh 64 Kword 780000h ...

Page 5

R Pinout and Signal Descriptions See Figure 5 and Table 2 for a logic diagram and brief overview of the signals connected to this device. Table 2: Signal Names Signal Name Function A22-A0 Address Inputs Data Input/Outputs, DQ15-DQ0 Command Inputs ...

Page 6

R X-Ref Target - Figure DQ8 DQ1 F K DQ0 G A22 Notes: 1. See the FT64/FTG64 package specifications ...

Page 7

R Latch Enable (L) Latch Enable latches the address bits on its rising edge. The address latch is transparent when Latch Enable and inhibited when Latch Enable The Latch Enable (L) signal must ...

Page 8

R as close as possible to the package). The PCB track widths should be sufficient to carry the required V program and erase currents. PP FPGA Configuration Overview Platform Flash XL enables the rich set of FPGA configuration features without ...

Page 9

R Slave SelectMAP Configuration Mode Platform Flash XL achieves maximum configuration performance when the FPGA is in Slave SelectMAP configuration mode. In the Slave SelectMAP mode, a stable, external clock source can drive the synchronous bitstream transfer from the device ...

Page 10

R Programming Overview Programming solutions satisfying the requirements for each product phase are available for Platform Flash XL. ISE software provides integrated programming support for the FPGA design engineer in the prototyping environment. Third-party programming support is also available for ...

Page 11

R Bus Operations There are six standard bus operations that control the device: Bus Read, Bus Write, Address Latch, Output Disable, Standby and Reset (Table Bus Read Bus Read operations are used to output the contents of the Memory Array, ...

Page 12

R Command Interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings and verifies the correct execution of the ...

Page 13

R into Read Electronic Signature mode. Subsequent Bus Read cycles output Electronic Signature data, and the Program/Erase controller continues to program or erase in the background. The Read Electronic Signature command only changes the read mode of the addressed bank. ...

Page 14

R The only operation permitted during Blank Check is Read Status Register. Dual Operations are not supported while a Blank Check operation is in progress. Blank Check operations cannot be suspended and are not allowed while the device is in ...

Page 15

R Buffer Enhanced Factory Program Command The Buffer Enhanced Factory Program command has been specially developed to speed up programming in manufacturing environments where the programming time is critical. The command is used to program one or more Write Buffer(s) ...

Page 16

R The Program/Erase Resume command is required to restart the suspended operation. One Bus Write cycle is required to issue the Program/Erase Suspend command. After the Program/Erase Controller pauses, bits SR7, SR6 and/or SR2 of the Status Register are set ...

Page 17

R • The first cycle sets up the Set Configuration Register command and the address corresponding to the Configuration Register content. • The second cycle writes the Configuration Register data and the confirm command. The Configuration Register data must be ...

Page 18

R (1) Table 7: Standard Commands Commands Read Array 1+ Read Status Register 1+ Read Electronic 1+ Signature Read CFI Query 1+ Clear Status Register 1 Block Erase 2 Program 2 (4) Buffer Program n+4 Program/Erase Suspend 1 Program/Erase Resume ...

Page 19

R Table 8: Factory Commands Command Phase Blank Check 2 Setup 2 Buffer Enhanced Program/ ≥32 Factory Program (3) Verify Exit 1 Notes Word Address in targeted bank, BKA = Bank Address, PD =Program Data ...

Page 20

R Table 10: Protection Register Locks Lock Number Address Bits bit 0 Lock 1 bit 1 80h bits bit 0 bit 1 bit 2 Lock 2 – 89h bit 13 bit 14 bit 15 X-Ref Target - ...

Page 21

R Status Register The Status Register provides information on the current or previous program or erase operations. A Read Status Register command is issued to read the contents of the Status Register, refer to "Read Status Register Command," page 14 ...

Page 22

R Controller is active; when the bit is High (set to ‘1’), the controller is inactive, and the device is ready to process a new command. The Program/Erase Controller Status bit is Low immediately after a Program/Erase Suspend command was ...

Page 23

R Block Protection Status Bit (SR1) The Block Protection Status bit is used to identify if a Program or Block Erase operation tried to modify the contents of a locked or locked-down block. When this bit is High (set to ...

Page 24

R Configuration Register The Configuration Register is used to configure the type of bus access that the memory performs. Refer to page 34 for details on read operations. The Configuration Register is set through the Command Interface using the Set ...

Page 25

R Read Mode Select Bit (CR15) The Read Select bit, CR15, is used to switch between Asynchronous and Synchronous Read operations. When this bit is set to ‘1’, read operations are asynchronous; when set to ‘0’, read operations are synchronous. ...

Page 26

R Wrap Burst Bit (CR3) The Wrap Burst bit (CR3) is used to select between wrap and no wrap. Synchronous burst reads can be confined inside the 16-word boundary (wrap) or overcome the boundary (no wrap). When ...

Page 27

R Table 14: Burst Type Definition Start Address 4 Words 0-1-2-3 0 1-2-3-0 1 2-3-0-1 2 3-0-1-2 3 7-4-5 0-1-2-3 0 1-2-3-4 1 2-3-4-5 2 3-4-5-6 3 7-8-9-10 7 12-13-14-15 12 13-14-15-WAIT-16 13 14-15-WAIT-WAIT-16-17 14 ...

Page 28

R X-Ref Target - Figure A22–A0 VALID ADDRESS DQ15–DQ0 Wait CR8 = ‘0’ CR10 = ‘0’ Wait CR8 = ‘1’ CR10 = ‘0’ Wait CR8 = ‘0’ CR10 = ‘1’ Wait CR8 = ‘1’ CR10 = ...

Page 29

R X-Ref Target - Figure DDQ T VHRWZ READY_WAIT T RWRT RWHKL K A22–A0 Address not Valid DQ15–DQ0 Notes tied High. 2. Address is latched on the third rising edge ...

Page 30

R X-Ref Target - Figure 13 T RWLRWH READY_WAIT G High A22-A0 DQ15-DQ0 Dk Dn DATA VALID Notes and Dn indicate the Data valid after k and n clock cycles, respectively. 2. This figure applies ...

Page 31

R X-Ref Target - Figure 15 T PLPH PLRWL PHRWZ READY_WAIT G High A22−A0 Address not Valid DQ15−DQ0 X-Ref Target - Figure 16 T PLPH RP READY_WAIT T PHRWZ T PLRWL Low G High ...

Page 32

R Read Modes Read operations can be performed in two different ways depending on the settings in the Configuration Register. If the clock signal is ‘don’t care’ for the data output, the read operation is asynchronous; if the data output ...

Page 33

R The Clock signal is then halted at V Enable (G) goes High. When Output Enable goes Low again and the Clock signal restarts, the Synchronous Burst Read operation is resumed at its previous location. When READY_WAIT (with CR4 = ...

Page 34

R Table 16: Dual Operations Allowed in Same Bank (Cont’d) Status of Bank Read Array Register Program Suspended Erase Suspended Notes: 1. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase ...

Page 35

R Block Locking Platform Flash XL features an instant, individual block-locking scheme, allowing any block to be locked or unlocked with no latency. This locking scheme has three levels of protection: • Lock/Unlock – this first level allows software only ...

Page 36

R Table 18: Lock Status (1) Current Protection Status Program/Erase Current State Allowed 1,0,0 (2) 1,0,1 – 1,1,0 1,1,1 – 0,0,0 (2) 0,0,1 – 0,1,1 – Notes: 1. The lock status is defined by the write protect pin and by ...

Page 37

R Power-On Reset To ensure a correct power-up sequence of Platform Flash XL, the V ramp time must not be shorter than DD VDDPOR 200 μs or longer than 50 ms during power-up (see page 40). These timing ...

Page 38

R X-Ref Target - Figure 18 T VDDPOR(MIN DDPOR V DDPD Notes slow-ramping V power supply can still be below the minimum operating voltage when the READY_WAIT pin is released. In this case, the DD ...

Page 39

R First Address Latching Sequence The first address latching sequence (FALS) is one of the key features of Platform Flash XL. This particular sequence, shown in Figure 19, page 41 and Figure 21, page allows the device to latch the ...

Page 40

R X-Ref Target - Figure DDQ READY_WAIT A22–A0 DQ15–DQ0 Notes: 1. Only on power-on-reset, FALS is initiated by READY_WAIT rising (Low-to-High) edge or G falling (High-to-Low) edge, whichever occurs last. After ...

Page 41

R X-Ref Target - Figure DDQ READY_WAIT T GLRWH G High RP E Low AVRWH A22–A0 DQ15–DQ0 Figure 21: First Address Latching Sequence (FALS): Clock is Free Running Table 20: FALS Sequence Timings ...

Page 42

R Program and Erase Times and Endurance Cycles Table 21 lists both program and erase times plus the number of program/erase cycles per block. Exact erase times can vary depending on the memory array condition. The best case is when ...

Page 43

R Maximum Rating Stressing the device above the rating listed in ratings only, and proper operation of the device at these or any other conditions above those indicated in this specification is not implied. Exposure to Absolute Maximum Rating conditions ...

Page 44

R Table 24: Quality and Reliability Characteristics Symbol T Data retention DR N Program/erase cycles (Endurance Electrostatic Discharge (ESD) ESD Notes: 1. Program/erase cycles when X-Ref Target - Figure 22 V DDQ X-Ref Target ...

Page 45

R (1) Table 25: Capacitance Symbol Parameter C Input capacitance IN C Output capacitance OUT Notes: 1. Sampled only, not 100% tested. Table 26: DC Characteristics: Currents Symbol Parameter I Input leakage current LI I Output leakage current LO Supply ...

Page 46

R Table 27: DC Characteristics: Voltages Symbol Parameter V Input Low voltage IL V Input High voltage IH V Output Low voltage OL V Output High voltage program voltage-logic PP1 program voltage factory PPH ...

Page 47

R X-Ref Target - Figure 26 A22–A3 T AVAV A2–A0 VALID ADDRESS T AVLH L T LLLH T LLQV T ELLH E T ELQV T ELQX G T ELTV Hi-Z (1) READY_WAIT T DQ15–DQ0 Valid Address Latch Notes: 1. READY_WAIT ...

Page 48

R Table 28: Asynchronous Read AC Characteristics Symbol Alt T T AVAV AVQV ACC T T AVQV1 PAGE ( AXQX OH T ELTV ( ELQV CE ( ELQX LZ T EHTZ ...

Page 49

R X-Ref Target - Figure 27 Hi-Z DQ15–DQ0 A22–A0 VALID ADDRESS T AVLH LLKH T AVKH ( ELKH KHAX E G High W T ELTV Hi-Z READY_WAIT Address Latch Notes: 1. The number of ...

Page 50

R Table 29: Synchronous Read AC Characteristics Symbol Alt T T AVKH AVCLKH T T ELKH ELCLKH (3) T ELTV T EHEL (3) T EHTZ T T KHAX CLKHAX (4) T KHQV T CLKHQV (3) T KHTV T KHQX T ...

Page 51

R X-Ref Target - Figure 29 A22– ELKH E G High W Hi-Z DQ15–DQ0 Hi-Z (1,2) READY_WAIT Notes: 1. The READY_WAIT signal is configured to be active during wait state. READY_WAIT signal is active Low. 2. ...

Page 52

R X-Ref Target - Figure 30 Hi-Z DQ15–DQ0 A22–A0 VALID ADDRESS T AVLH L T LLKH T AVKH ( ELKH E G (2,5) Hi-Z READY_WAIT High W Notes: 1. The number of clock cycles to be inserted ...

Page 53

R X-Ref Target - Figure 31 A22–A0 BANK ADDRESS T AVLH T LLLH L T ELLH E T ELWL G T GHWL W T DVWH DQ15–DQ0 COMMAND SET-UP COMMAND Figure 31: Write AC Waveforms, Write Enable ...

Page 54

R Table 30: Write AC Characteristics, Write Enable Controlled Symbol Alt T T Address Valid to Next Address Valid AVAV WC T Address Valid to Latch Enable High AVLH (2) T Address Valid to Write Enable High AVWH T T ...

Page 55

R X-Ref Target - Figure 32 BANK ADDRESS A22– AVLH LHAX T LLLH L T ELLH W T WLEL G T GHEL E T ELEH T DVEH DQ15–DQ0 COMMAND SET-UP COMMAND Figure 32: Write ...

Page 56

R Table 31: Write AC Characteristics, Chip Enable Controlled Symbol Alt T T Address Valid to Next Address Valid AVAV WC T Address Valid to Chip Enable High AVEH T Address Valid to Latch Enable High AVLH T T Data ...

Page 57

R Table 32: Reset and Power-Up AC Characteristics Symbol Reset Low to: T PLWL Write Enable Low, T PLEL Chip Enable Low, T PLGL Output Enable Low, T PLLL Latch Enable Low Reset High to: T PHWL Write Enable Low ...

Page 58

... FTG64 = 64-ball, Fine-Pitch Thin Ball Grid Array, Pb-free Notes: 1. See the FT64/FTG64 package specifications at http://www.xilinx.com/support/documentation/package_specifications.htm. Valid Ordering Combinations Table 34: Valid Ordering Combinations XCF128XFTG64C DS617 (v3.0.1) January 07, 2010 Product Specification Platform Flash XL High-Density Configuration and Storage Device Parameter drops below the ...

Page 59

... Origin and Traceability Code Appendix A: Block Address Tables Table 35: Boot Block Addresses (1) Bank Parameter Bank Bank 1 DS617 (v3.0.1) January 07, 2010 Product Specification Platform Flash XL High-Density Configuration and Storage Device XCF128XFTG64C XXX XXXXX XX XXX XX YWW FT64 Ball A1 Figure 36: Marking Information # Size (Kword ...

Page 60

R Table 35: Boot Block Addresses (Cont’d) (1) Bank Bank 2 Bank 3 Bank 4 Bank 5 Bank 6 DS617 (v3.0.1) January 07, 2010 Product Specification Platform Flash XL High-Density Configuration and Storage Device # Size (Kword ...

Page 61

R Table 35: Boot Block Addresses (Cont’d) (1) Bank Bank 7 Bank 8 Bank 9 Bank 10 Bank 11 DS617 (v3.0.1) January 07, 2010 Product Specification Platform Flash XL High-Density Configuration and Storage Device # Size (Kword ...

Page 62

R Table 35: Boot Block Addresses (Cont’d) (1) Bank Bank 12 Bank 13 Bank 14 Bank 15 Notes: 1. There are two Bank Regions: Bank Region 1 contains all the banks made up of main blocks only; Bank Region 2 ...

Page 63

R Appendix B: Common Flash Interface The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from flash memory devices. This interface allows system software to query the device to determine various electrical and timing ...

Page 64

R Table 38: CFI Query System Interface Information Offset Data V Logic Supply Minimum Program/Erase or Write voltage DD 01Bh 0017h bit BCD value in volts bit BCD value in 100 millivolts V Logic ...

Page 65

R Table 40: Primary Algorithm-Specific Extended Query Table Offset Data 0050h (P)h = 10Ah 0052h 0049h (P+3)h = 10Dh 0031h (P+4)h = 10Eh 0033h (P+5)h = 10Fh 00E6h 0003h (P+7)h = 111h 0000h (P+8)h = 112h 0000h (P+9)h = 113h ...

Page 66

R Table 41: Protection Register Information Offset Data (P+E)h = 118h 0002h (P+F)h = 119h 0080h (P+10)h = 11Ah 0000h (P+ 11)h = 11Bh 0003h (P+12)h = 11Ch 0003h (P+13)h = 11Dh 0089h (P+14)h = 11Eh 0000h (P+15)h = 11Fh ...

Page 67

R Table 44: Bank and Erase Block Region 1 Information Offset Data (P+24)h = 12Eh 0Fh (P+25)h = 12Fh 00h (P+26)h = 130h 11h (P+27)h = 131h 00h (P+28)h = 132h 00h (P+29)h = 133h 01h (P+2A)h = 134h 07h ...

Page 68

R Table 45: Bank and Erase Block Region 2 Information Offset Data (P+32)h = 13Ch 01h (P+33)h = 13Dh 00h (P+34)h = 13Eh 11h (P+35)h = 13Fh 00h (P+36)h = 140h 00h (P+37)h = 141h 02h (P+38)h = 142h 06h ...

Page 69

R Appendix C: Flowcharts and Pseudocodes X-Ref Target - Figure 37 Start (3) Write 40h or 10h Write Address & Data Read Status (3) Register NO SR7 = 1 YES Invalid SR3 = 0 Error YES NO ...

Page 70

R X-Ref Target - Figure 38 Start Write Block Address & BCh Write Block Address & CBh Read (1) Status Register NO SR7 = 1 YES YES Command Sequence SR4 = 1 SR5 = 1 NO SR5 = 0 Blank ...

Page 71

R X-Ref Target - Figure 39 Start Buffer Program E8h Command, Start Address Read Status Register NO SR7 = 1 YES (1) Write n , Start Address Write Buffer Data, Start Address YES Write ...

Page 72

R X-Ref Target - Figure 40 Start Write B0h Write 70h Read Status Register NO SR7 = 1 YES NO Program Complete SR2 = 1 Write FFh Read Data YES Write FFh Read data from another address Write D0h (1) ...

Page 73

R X-Ref Target - Figure 41 Start (2) Write 20h Write Block Address & D0h Read Status (2) Register NO SR7 = 1 YES SR3 = 0 Error YES YES Command SR4, SR5 = 1 Sequence Error ...

Page 74

R X-Ref Target - Figure 42 Start Write B0h Write 70h Read Status Register NO SR7 = 1 YES NO SR6 = 1 YES Write FFh Read data from another block, Program, Set Configuration Register or Block Protect/Unprotect/Lock Write D0h ...

Page 75

R X-Ref Target - Figure 43 Start (1) Write 60h Write 01h, D0h or 2Fh (1) Write 90h Read Block Lock States NO Locking change confirmed? YES (1) Write FFh End Notes: 1. Any address within the bank can equally ...

Page 76

R X-Ref Target - Figure 44 Start (3) Write C0h Write Address & Data Read Status (3) Register NO SR7 = 1 YES SR3 = 0 Error YES NO Program SR4 = 0 Error YES NO Program ...

Page 77

R Start Write 80h to Address WA1 Write D0h to Address WA1 Read Status Register NO SR7 = 0 NO Initialize count SR4 = Write PDX Read Status Register Address WA1 SR3 and SR1for errors Increment ...

Page 78

R Appendix D: Command Interface State Tables Table 46: Command Interface States – Modify Table, Next State Current CI State Program Ready Ready Setup Lock/CR Setup Setup OTP IS in OTP Busy OTP Busy Busy IS in OTP busy Setup ...

Page 79

R Table 46: Command Interface States – Modify Table, Next State Current CI State Setup Ready (error Erase Busy Erase Busy Busy IS in Erase Erase Busy Erase Program Suspend Suspend ...

Page 80

R Table 46: Command Interface States – Modify Table, Next State Current CI State Buffer Suspend Suspend Suspend Program Erase Suspend (Cont’ Suspend in ES Setup Blank Check ...

Page 81

R Table 47: Command Interface States – Modify Table, Next Output State Current CI State Program Setup Erase Setup OTP Setup Program Setup in Erase Suspend BEFP Setup BEFP Busy Buffer Program Setup Buffer Program Load 1 Buffer Program Load ...

Page 82

R Table 47: Command Interface States – Modify Table, Next Output State Current CI State OTP Busy Ready Program Busy Erase Busy Buffer Program Busy Program/Erase Suspend Buffer Program Suspend Array Program Busy in Erase Suspend Buffer Program Busy in ...

Page 83

R Table 48: Command Interface States – Lock Table, Next State Current CI State Lock/CR Setup( (2) Setup (60h) Ready Lock/CR Setup Lock/CR Setup Ready (Lock error) Setup OTP Busy IS in OTP busy Setup Busy IS in Program Program ...

Page 84

R Table 48: Command Interface States – Lock Table, Next State Current CI State Lock/CR Setup( (2) Setup (60h) Setup Buffer Load 1 Buffer Program Confirm in Erase Suspend when count =0; Else Buffer Program Buffer Load 2 Confirm Buffer ...

Page 85

R Table 49: Command Interface States – Lock Table, Next Output State Blank Current CI Lock/CR Check State (3) Setup ( setup 60h) (BCh) Program Setup Erase Setup OTP Setup Program Setup in Erase Suspend BEFP Setup BEFP Busy Buffer ...

Page 86

R Table 49: Command Interface States – Lock Table, Next Output State Blank Current CI Lock/CR Check State (3) Setup ( setup 60h) (BCh) OTP Busy Ready Program Busy Erase Busy Buffer Program Busy Program/Eras e Suspend Buffer Program Suspend ...

Page 87

R Revision History The following table shows the revision history for this document. Date Version 12/13/07 1.0 Initial Xilinx release. 03/31/08 2.0 Added bus operations and advance device specifications: • Expanded • Added the following sections: ♦ ♦ ♦ ♦ ...

Page 88

R Date Version • See XCN09032, DS617, High-Density Configuration and Storage Device Data Sheet Revision, 11/30/09 3.0 v3.0, for detailed product revisions: • Product change from preliminary to production phase. • Updated • Removed references and placeholders to V • ...

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