ADN2841ACP-32-RL Analog Devices Inc, ADN2841ACP-32-RL Datasheet - Page 8

IC DVR LASER DIODE 5V 32-LFCSP

ADN2841ACP-32-RL

Manufacturer Part Number
ADN2841ACP-32-RL
Description
IC DVR LASER DIODE 5V 32-LFCSP
Manufacturer
Analog Devices Inc
Type
Laser Diode Driver (Fiber Optic)r
Datasheet

Specifications of ADN2841ACP-32-RL

Number Of Channels
1
Rohs Status
RoHS non-compliant
Data Rate
2.7Gbps
Voltage - Supply
4.5 V ~ 5.5 V
Current - Supply
50mA
Current - Modulation
80mA
Current - Bias
100mA
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VFQFN, CSP Exposed Pad
Mounting Type
Surface Mount
Operating Supply Voltage (max)
5.5V
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
ADN2841
ALARM INTERFACES
A 30 kΩ internal pull-up resistor is employed to pull the digital
high value of the alarm outputs to V
has a feature that allows the user to externally wire resistors in
parallel with the 30 kΩ pull-up resistors, thus enabling the user
to interface to non-V
be below the V
POWER CONSUMPTION
The ADN2841 die temperature must be kept below 125°C.
The θ
32-lead LPCSP when soldered in a four-layered board. Both
LFCSP packages have an exposed paddle and as such need to
be soldered to the PCB to achieve this thermal performance.
Thus the maximum combination of I
calculated.
P
=
V
JA
CC
is 25°C/W for the 48-lead LFCSP and 32°C/W for the
×
FU-445SDF-WM1
I
V
ACTUAL SUPPLY PINS ON THE ADN2841 AND THE LASER DIODE USED.
Figure 6. 2.7 Gbps Test Circuit, DC-Coupled, Data Not Clocked, Fast Loop Time Constant Selected
CC
CC
CC
V
CC
s SHOULD HAVE BYPASS CAPACITORS AS CLOSE AS POSSIBLE TO THE
used for the ADN2841.
+
T
I
(
I
CC
DIE
CC
BIAS
levels. Non-V
=
=
I
T
×
CCMIN
AMBIENT
V
BIAS
+ 0 3 .
_
PIN
CC
+
CC
BIAS
θ
V
. However, the ADN2841
CC
J
)
A
alarm output levels must
I
25
+
MOD
+ I
×
V
(
I
CC
P
MOD
MOD
CCBIAS
V
must be
CC
×
V
37
48
MOD
GND2
VCC2
IMODN
IMODN
GND2
IMODP
IMODP
GND2
GND2
IBIAS
IBIAS
36
1
_
PIN
V
CC
)
–8–
ADN2841
Figure 5. Application Using Optical Supervisor ADN2850
as a Dual 10-Bit Digital Potentiometer Using Thin-Film
Resistor Technology to Give Very Low Temperature
Coefficients
V
CLK
CC
RX
CS
TX
1.5k
GND
PAVCAP
SDI
SDO
CLK
CS
ERCAP
DATAN
DATAP
ADN2850
CLKN
GND1
GND1
CLKP
VCC1
100nF
GND
GND
GND
13
25
V
CC
DAC1
DAC2
IDTONE
12
24
DATAN
DATAP
100nF
V
CC
GND
PSET
ERSET
100nF
IMPD
V
ADN2841
CC
100nF
IMODP
IBIAS
FAIL
DEGRADE
CLKN
CLKP
DATAP
DATAN
10 F
V
CC
REV. A

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