SI9910DY-T1-E3 Vishay, SI9910DY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI9910DY-T1-E3
• Description: IC MOSFET DVR ADAPTIVE PWR 8SOIC
• Manufacturer: Vishay
• Type: High Sider

Specifications of SI9910DY-T1-E3

• Configuration: High-Side
• Input Type: Non-Inverting
• Delay Time: 120ns
• Current - Peak: 1A
• Number Of Configurations: 1
• Number Of Outputs: 1
• High Side Voltage - Max (bootstrap): 500V
• Voltage - Supply: 10.8 V ~ 16.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 50 ns
• Fall Time: 35 ns
• Supply Voltage (min): 10.8 V
• Supply Current: 0.5 mA
• Maximum Power Dissipation: 700 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Device Type: MOSFET
• Peak Output Current: 1A
• Input Delay: 120ns
• Output Delay: 135ns
• Supply Voltage Range: 10.8V To 16.5V
• Driver Case Style: SOIC
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9910DY-T1-E3TR

As demonstrated in Figure 9, the Si9910 is intended for use as
both a ground-referenced gate driver and as a “high-side” or
source-referenced gate driver in half-bridge applications.
Several features of the Si9910 facilitate its use in half-bridge
high-side drive applications.
The Si9910 was designed to be compatible with two of
the most commonly used floating supply techniques: the
bootstrap and the charge pump. Both of these techniques
have limitations when used alone.
bootstrap circuit can provide low-impedance drive which
minimizes transition losses, but it does not provide static
(100%
capacitor’s charge will be depleted by system leakages,
Document Number: 70579
15-Feb-94
Logic
Inputs
V
DD
OSC
(12 TO 15 V)
*C1 – C3
duty-cycle) drive.
C1 = dv/dt feeback Cap
C2 = Bootstrap Cap
C3 = Charge Pump Cap
C3*
CMOS
Logic
0.3 to 1000 pF, 500 V, surface mount capacitors are available in a line of high Q porcelain ceramic capacitors from Murata.
D1
VN50300T
Input
Input
R4
RS
Q2
Eventually the bootstrap
C4
Figure 9. High-Voltage Half-Bridge with Si9910 Drivers
C2
A properly designed
Delay
Delay
2 s
2 s
Undervoltage/
Undervoltage/
Overcurrent
Overcurrent
Protection
Protection
resulting in reduced (potentially damaging) levels of gate-drive
voltage. A charge pump circuit can provide static operation
but usually yields increased gate-drive impedance, which
ultimately results in slower transition rates and increased
switching losses.
increased to provide faster transition rates, the oscillator circuit
is subjected to higher peak currents in the presence of
the dv/dt rates that exist in half-bridge motor drives. This
limits the extent to which the charge pump capacitor can be
increased.
The Si9910 is configured to take advantage of either floating
supply technique, (if the application is not sensitive to their par-
ticular limitations), or a combination of both techniques (if
switching losses must be minimized and static operation is
necessary). Figure 9 illustrates both the charge pump and
bootstrap circuits used in conjunction with an Si9910 in a high-
side driver application.
V
V
SS
SS
As
the charge pump capacitance is
PULL-DOWN
PULL-DOWN
www.vishay.com FaxBack 408-970-5600
PULL-UP
PULL-UP
I
I
DRAIN
DRAIN
SENSE
SENSE
V
V
DS
DS
Vishay Siliconix
C1’*
C1*
R3’
R2’
R3
R2
R1’
R
1
AN705
V
MOTOR
Q1
Motor
Q1’
7