2ED020I12-F Infineon Technologies, 2ED020I12-F Datasheet - Page 11

• Manufacturer Part Number: 2ED020I12-F
• Description: IC DRIVER IGBT 2-CHAN PDSO-18-1
• Manufacturer: Infineon Technologies

Specifications of 2ED020I12-F

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 85ns
• Current - Peak: 1A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 1200V
• Voltage - Supply: 14 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DSO-20 (18 Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2ED020I12FIXT; 2ED020I12FXT; SP000107512

Parameter
Thermal resistance (high
side chip), junction to
ambient
Thermal resistance (low
side chip), junction to
ambient
Junction temperature
Storage temperature
1)
2)
3)
4)
5)
6)
7)
5.2
Note: Within the operating range the IC operates as described in the functional
Parameter
High side ground
High side supply voltage
Low side supply voltage
Logic input voltages
(InH, InL, SD)
OP input voltages
(OP–, OP+)
CP input voltages
(CP–, CP+)
Final Datasheet
With reference to high side ground GNDH.
With respect to both GND and GNDL.
With respect to GNDL.
Please note the different specifications for the operating range (section 5.2).
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5k series resistor).
Considering Rth(both chips active)=90K/W
Device soldered to reference PCB without cooling area
description. Unless otherwise noted all parameters refer to GND.
Operating Range
Final Data
Symbol
R
R
T
T
Symbol
GNDH
VSH
VSL
V
V
V
J
S
IN
OP
CP
THJA(HS)
THJA(LS)
min.
– 1200
14
14
0
– 0.1
– 0.1
min.
– 55
11
—
—
—
Limit Values
Limit Values
max.
1200
18
18
5
2
2
max.
110
110
150
150
High and Low Side Driver
Electrical Parameters
Unit
V
V
V
V
V
V
Unit
K/W
K/W
°C
°C
2ED020I12-FI
September 2007
Remarks
1)
2)
Remarks
6)
6)