HCNW136-000E Avago Technologies US Inc., HCNW136-000E Datasheet - Page 10
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HCNW136-000E
Manufacturer Part Number
HCNW136-000E
Description
OPTOCOUPLER T-OUT 1MBD 8DIP WIDE
Manufacturer
Avago Technologies US Inc.
Datasheet
1.HCPL-0500-000E.pdf
(17 pages)
Specifications of HCNW136-000E
Input Type
DC
Package / Case
8-DIP (0.400", 10.16mm)
Voltage - Isolation
5000Vrms
Number Of Channels
1, Unidirectional
Current - Output / Channel
8mA
Data Rate
1Mbps
Propagation Delay High - Low @ If
200ns @ 16mA
Current - Dc Forward (if)
25mA
Output Type
Open Collector
Mounting Type
Through Hole
Isolation Voltage
5000 Vrms
Minimum Forward Diode Voltage
1.45 V
Output Device
Transistor With Base
Configuration
1 Channel
Current Transfer Ratio
50 %
Maximum Baud Rate
1 MBps
Maximum Forward Diode Voltage
1.85 V
Maximum Reverse Diode Voltage
3 V
Maximum Input Diode Current
25 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 55 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
16mA
Output Voltage
20V
Opto Case Style
DIP
No. Of Pins
8
Ctr Max
50%
Ctr Min
19%
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1524-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HCNW136-000E
Manufacturer:
AVAGO
Quantity:
8 290
Part Number:
HCNW136-000E
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Electrical Specifications (DC)
Over recommended temperature (T
*For JEDEC registered parts.
**All typicals at T
10
Parameter
Current
Transfer Ratio
Logic Low
Output Voltage
Logic High
Output Current
Logic Low
Supply Current
Logic High
Supply Current
Input Forward
Input Reverse
Breakdown
Voltage
Temperature
Coefficient of
Forward Volt-
age
Input
Capacitance
Transistor DC
Current Gain
A
= 25°C.
Voltage
Symbol
CTR*
BV
I
∆V
I
∆T
V
I
CCH
V
C
h
OH
CCL
OL
F
FE
IN
R
*
F
*
A
*
*
/
HCPL-0500
HCPL-2502
HCPL-0501
HCPL-0500
HCPL-2502
HCPL-0501
HCNW135
HCNW136
HCNW135
HCNW136
Widebody
Widebody
Widebody
Widebody
Widebody
8-Pin DIP
8-Pin DIP
8-Pin DIP
8-Pin DIP
8-Pin DIP
6N135
6N136
6N135
6N136
Device
SO-8
SO-8
SO-8
SO-8
SO-8
A
= 0°C to 70°C) unless otherwise specified. See note 13.
1.45
1.35
Min. Typ.**
15
15
19
15
7
5
5
3
0.003
0.01
0.02
1.68
-1.6
-1.9
150
130
180
160
0.1
0.1
0.1
0.1
1.5
18
19
25
24
25
50
60
90
Max.
1.85
1.95
200
0.4
0.5
0.4
0.5
0.5
1.7
1.8
50
22
50
50
1
1
2
mV/°C I
Units
µA
µA
µA
pF
%
V
V
V
I
T
T
T
T
T
T
T
T
T
T
F
R
I
A
A
A
A
A
A
A
A
A
A
= 16 mA
R
= 10 µA
I
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 100
F
µA
V
V
= 16 mA, V
f = 1 MHz, V
V
V
O
O
O
O
= 0.4 V, I
= 0.4 V, I
= 5 V, I
= 5 V, I
V
CC
V
V
V
= 15 V
Test Conditions
O
O
O
I
I
I
I
O
O
V
I
I
O
O
O
O
B
B
V
V
V
V
V
V
I
V
= V
F
F
= V
= V
O
F
O
= 3 mA
= 3 mA
= 20 µA
= 20 µA
= 1.1 mA
= 0.8 mA
= 3.0 mA
= 2.4 mA
CC
O
O
O
O
O
O
= 16 mA
= 16 mA
= 0 mA,
F
= Open,
= Open,
= 0.4 V
= 0.5 V
= 0.4 V
= 0.5 V
= 0.4 V
= 0.5 V
= 0 V
CC
= 15 V
CC
CC
= 5.5 V
= 15 V
= 15 V
I
I
V
V
F
F
I
F
CC
CC
= 16 mA,
= 16 mA,
= 0 mA
= 4.5 V
= 4.5 V
1, 2,
Fig.
13
13
4
7
3
5, 11
Note