ACPL-M60L-500E Avago Technologies US Inc., ACPL-M60L-500E Datasheet - Page 6
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ACPL-M60L-500E
Manufacturer Part Number
ACPL-M60L-500E
Description
OPTOCOUPLER 15MBD 3.3V 5-SOIC
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ACPL-M60L-500E.pdf
(11 pages)
Specifications of ACPL-M60L-500E
Isolation Voltage
3750 Vrms
Maximum Continuous Output Current
50 mA
Maximum Fall Time
0.02 us
Maximum Forward Diode Current
20 mA
Maximum Rise Time
45 ns
Minimum Forward Diode Voltage
1.4 V
Output Device
Logic Gate Photo IC
Configuration
1 Channel
Maximum Baud Rate
10 MBps
Maximum Forward Diode Voltage
1.85 V
Maximum Reverse Diode Voltage
5 V
Maximum Power Dissipation
85 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
SO-5
Number Of Elements
1
Input Type
DC
Output Type
Open Collector
Forward Voltage
1.75V
Forward Current
20mA
Output Current
50mA
Package Type
SOIC
Operating Temp Range
-40C to 85C
Power Dissipation
85mW
Propagation Delay Time
90ns
Pin Count
5
Mounting
Surface Mount
Reverse Breakdown Voltage
5V
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ACPL-M60L-500E
Manufacturer:
MICROCHIP
Quantity:
12 400
Company:
Part Number:
ACPL-M60L-500E
Manufacturer:
AVAGO
Quantity:
9 000
Part Number:
ACPL-M60L-500E
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Electrical Specifications
Over recommended Operating Condition (T
All Typicals at V
*The JEDEC Registration specifies 0˚C to +70˚C. Avago specifies –40˚C to +85˚C.
Electrical Specifications
Over recommended temperature (T
All Typical specification at V
*All typicals at T
6
Parameter
High Level
Output Current
Input Threshold
Current
Low Level
Output Voltage
High Level Supply Current
Low Level Supply Current
Input Forward
Voltage
Input Reverse
Breakdown Voltage
Input Diode
Temperature
Coefficient
Input-Output Insulation
Input Capacitance
Parameter
High Level
Output Current
Input Threshold
Current
Low Level
Output Voltage
High Level Supply Current
Low Level Supply Current
Input Forward
Voltage
Input Reverse
Breakdown Voltage
Input Diode
Temperature
Coefficient
Input-Output Insulation
Input Capacitance
A
= 25°C, V
CC
= 3.3 V, T
CC
= 5 V.
A
CC
Symbol
I
I
V
I
I
V
BV
∆V
∆T
V
C
= 25°C.
OH
TH
CCH
CCL
OL
F
ISO
IN
Symbol
I
I
V
I
I
V
BV
∆V
V
C
A
= 5V, T
OH
TH
CCH
CCL
R
F
OL
F
*
ISO
IN
*
*
/
R
F
/∆T
A
A
A
= –40°C to +85°C , 4.5V ≤ V
= 25 °C
Min.
1.4
5
3750
Min.
1.4
1.3
5
3750
A
= –40°C to +85°C , 2.7V ≤ V
Typ.
4.5
3.0
0.35
4.7
7.0
1.5
–1.6
60
Typ.*
5.5
2
0.4
4
6
1.5
-1.6
60
Max.
50
5.0
0.6
7.0
10.0
1.75*
Max.
100
5
0.6
7.5
10.5
1.75
1.85
DD
Units
µA
mA
V
mA
mA
V
V
mV/˚C
V
pF
Units
µA
mA
V
mA
V
mV/°C
V
pF
RMS
RMS
≤ 5.5V) unless otherwise specified.
DD
Test Conditions
V
I
V
I
V
I
I
I
T
I
I
R
f = 1 MHz, V
F
OL
OL
F
F
R
F
A
CC
CC
CC
H
Test Conditions
V
I
V
V
V
I
V
V
T
I
I
R
V
≤ 3.6V) unless otherwise specified.
I
= 250 µA
= 0 mA, V
= 10 mA, V
= 10 µA
= 10 mA
F
OL
F
R
A
CC
CC
F
F
= 25˚C, I
H
CC
O
CC
CC
≤ 50%, t = 1 min.
(Sinking) = 13 mA
(Sinking) = 13 mA
= 250 µA
= 10 mA
= 10 µA
= 25°C, I
= 10 mA
= 0V, f = 1 MHz
= 3.3 V, V
= 3.3 V, V
= 3.3 V, I
≤ 50%, t = 1 min.
= 0.6 V
(Sinking) = 13 mA
= 5.5 V, I
= 5.5 V, I
= 5.5 V, V
= 5.5 V, I
= 5.5 V, I
F
CC
F
F
F
= 10 mA
CC
O
O
= 0 V
O
F
= 10 mA
= 5 mA
F
F
= 3.3 V
O
= 3.3 V
= 0.6 V,
= 0 mA,
= 5 mA,
= 10 mA,
≥13 mA,
= 3.3 V
= 5.5 V
Fig.
1
2
5
Fig.
1
2
5
Note
12, 13
Note
12, 13